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1. (WO2016190531) METHOD FOR PREPARING BLACK PHOSPHORUS THIN FILM AND BLACK PHOSPHORUS THIN FILM PREPARED THEREBY
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2016/190531 International Application No.: PCT/KR2016/002977
Publication Date: 01.12.2016 International Filing Date: 24.03.2016
IPC:
H01L 21/02 (2006.01) ,H01L 21/70 (2006.01) ,H01L 21/205 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20
Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
205
using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
Applicants:
한국표준과학연구원 KOREA RESEARCH INSTITUTE OF STANDARDS AND SCIENCE [KR/KR]; 대전시 유성구 가정로 267 267, Gajeong-ro Yuseong-gu Daejeon 34113, KR
Inventors:
권혁상 KWON, Hyuksang; KR
김정원 KIM, Jeong Won; KR
이은성 LEE, Eun Seong; KR
Agent:
특허법인 플러스 PLUS INTERNATIONAL IP LAW FIRM; 대전시 서구 한밭대로 809 10층 10F, 809, Hanbat-daero Seo-gu, Daejeon 35209, KR
Priority Data:
10-2015-007481028.05.2015KR
10-2015-017225304.12.2015KR
Title (EN) METHOD FOR PREPARING BLACK PHOSPHORUS THIN FILM AND BLACK PHOSPHORUS THIN FILM PREPARED THEREBY
(FR) PROCÉDÉ DE PRÉPARATION DE FILM MINCE DE PHOSPHORE NOIR ET FILM MINCE DE PHOSPHORE NOIR PRÉPARÉ PAR CE PROCÉDÉ
(KO) 흑린 박막의 제조방법 및 이로부터 제조된 흑린 박막
Abstract:
(EN) The present invention relates to a method for preparing a black phosphorus thin film and a black phosphorus thin film prepared thereby and, specifically, prepares a black phosphorus thin film by forming a black phosphorus ultra-thin film by reactive oxygen in a chamber and removing an accompanying black phosphorus oxide film with water. The black phosphorus thin film of the present invention has no substantial defect in a large area, has a flat surface, and has a surface roughness characteristic of 1 nm or less, thereby exhibiting high applicability to an optoelectronic device and a field effect transistor.
(FR) La présente invention concerne un procédé de préparation d'un film mince de phosphore noir et un film mince de phosphore noir préparé par ce procédé et, plus particulièrement, prépare un film mince de phosphore noir grâce à la formation d'un film ultramince de phosphore noir par l'oxygène réactif dans une chambre et au retrait d'un film d'oxyde de phosphore noir associé avec de l'eau. Le film mince de phosphore noir de la présente invention ne présente pas de défaut sensible dans une grande superficie, a une surface plate, et a une rugosité de surface caractéristique inférieure ou égale à 1 nm, ce qui lui permet de présenter une applicabilité élevée à un dispositif optoélectronique et à un transistor à effet de champ.
(KO) 본 발명은 흑린 박막의 제조방법 및 그로부터 제조된 흑린 박막에 관한 것으로, 상세하게는 챔버 내에서 활성산소에 의하여 흑린 초박막을 형성하고, 수반되는 흑린 산화막을 물로 제거하여 흑린 초박막을 제조하는 것이다. 본 발명의 흑린 초박막은 대면적에서 실질적으로 결함이 없고 평탄한 표면을 가지며, 1 nm 이하의 표면조도 특성을 가짐으로써 광전자소자 및 전계 효과 트랜지스터에 높은 응용성을 나타낸다.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Korean (KO)
Filing Language: Korean (KO)