WIPO logo
Mobile | Deutsch | Español | Français | 日本語 | 한국어 | Português | Русский | 中文 | العربية |
PATENTSCOPE

Search International and National Patent Collections
World Intellectual Property Organization
Options
Query Language
Stem
Sort by:
List Length
Some content of this application is unavailable at the moment.
If this situation persist, please contact us atFeedback&Contact
1. (WO2016186947) TUNNEL FIELD EFFECT TRANSISTOR AND METHOD OF MAKING THE SAME
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2016/186947 International Application No.: PCT/US2016/032032
Publication Date: 24.11.2016 International Filing Date: 12.05.2016
Chapter 2 Demand Filed: 15.03.2017
IPC:
H01L 29/66 (2006.01) ,H01L 29/739 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
68
controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
70
Bipolar devices
72
Transistor-type devices, i.e. able to continuously respond to applied control signals
739
controlled by field effect
Applicants: QUALCOMM INCORPORATED[US/US]; Attn: International IP Administration 5775 Morehouse Drive San Diego, California 92121-1714, US
Inventors: LI, Xia; US
YANG, Bin; US
Agent: CICCOZZI, John L.; US
Priority Data:
14/713,71215.05.2015US
Title (EN) TUNNEL FIELD EFFECT TRANSISTOR AND METHOD OF MAKING THE SAME
(FR) TRANSISTOR À EFFET DE CHAMP ET À EFFET TUNNEL ET SON PROCÉDÉ DE FABRICATION
Abstract:
(EN) A vertically integrated transistor device increases the effective active area of the device to improve the performance characteristics of the device. The transistor device may include a plurality of gate elements, a plurality of source-drain elements extending parallel to the plurality of gate elements and horizontally spaced therefrom; and a plurality of fin elements extending parallel to the plurality of gate elements and vertically spaced therefrom, wherein each of the plurality of fin elements is horizontally spaced a first distance from each of the other ones of the plurality of fin elements.
(FR) Un dispositif à transistor intégré verticalement augmente la superficie active effective du dispositif pour améliorer les caractéristiques de performance du dispositif. Le dispositif à transistor peut comprendre une pluralité d'éléments de grille, une pluralité d'éléments de source-drain s'étendant parallèlement à la pluralité d'éléments de grille et horizontalement espacés de ceux-ci ; et une pluralité d'éléments en forme d'ailette s'étendant parallèlement à la pluralité d'éléments de grille et verticalement espacés de ceux-ci, chaque élément de la pluralité d'éléments en forme d'ailette étant horizontalement espacé d'une première distance de chacun des autres éléments parmi la pluralité d'éléments en forme d'ailette.
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)