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Machine translation
1. (WO2016186648) APPARATUS AND METHOD FOR FABRICATING A HIGH DENSITY MEMORY ARRAY
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2016/186648    International Application No.:    PCT/US2015/031440
Publication Date: 24.11.2016 International Filing Date: 18.05.2015
IPC:
G11C 5/02 (2006.01), G11C 5/06 (2006.01)
Applicants: INTEL CORPORATION [US/US]; 2200 Mission College Blvd. Santa Clara, CA 95054 (US)
Inventors: LEE, Kevin J.; (US).
WANG, Yih; (US).
TAN, Elliot N.; (US)
Agent: MUGHAL, Usman A.; (US)
Priority Data:
Title (EN) APPARATUS AND METHOD FOR FABRICATING A HIGH DENSITY MEMORY ARRAY
(FR) APPAREIL ET PROCÉDÉ DE FABRICATION D'UN RÉSEAU DE MÉMOIRE DE HAUTE DENSITÉ
Abstract: front page image
(EN)Described is an apparatus which comprises: non-orthogonal transistor fins which are non-orthogonal to transistor gates; diffusion contacts with non-right angled sides, the diffusion contacts coupled to the non-orthogonal transistor fins; first vias; and at least one memory element coupled to at least one of the diffusion contacts through at least one of the first vias.
(FR)L'invention concerne un appareil qui comprend : des ailettes de transistor non-orthogonales qui sont non orthogonales par rapport à des grilles de transistor; des contacts de diffusion ayant des côtés inclinés non-droits, les contacts de diffusion étant couplés aux ailettes de transistor non-orthogonales; des premiers trous d'interconnexion; et au moins un élément de mémoire couplé à au moins l'un des contacts de diffusion via au moins l'un des premiers trous d'interconnexion.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)