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1. WO2016185549 - THERMOELECTRIC CONVERSION MATERIAL, THERMOELECTRIC CONVERSION ELEMENT AND THERMOELECTRIC CONVERSION MODULE USING SAME

Publication Number WO/2016/185549
Publication Date 24.11.2016
International Application No. PCT/JP2015/064244
International Filing Date 19.05.2015
IPC
H01L 35/22 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
35Thermoelectric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermoelectric effects or thermomagnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
12Selection of the material for the legs of the junction
14using inorganic compositions
22comprising compounds containing boron, carbon, oxygen, or nitrogen
C01G 41/00 2006.01
CCHEMISTRY; METALLURGY
01INORGANIC CHEMISTRY
GCOMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F94
41Compounds of tungsten
C23C 14/34 2006.01
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
22characterised by the process of coating
34Sputtering
C30B 29/22 2006.01
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
29Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
10Inorganic compounds or compositions
16Oxides
22Complex oxides
H02N 11/00 2006.01
HELECTRICITY
02GENERATION, CONVERSION, OR DISTRIBUTION OF ELECTRIC POWER
NELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
11Generators or motors not provided for elsewhere; Alleged perpetua mobilia obtained by electric or magnetic means
CPC
C01G 41/00
CCHEMISTRY; METALLURGY
01INORGANIC CHEMISTRY
GCOMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
41Compounds of tungsten
C23C 14/34
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
22characterised by the process of coating
34Sputtering
C30B 29/22
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
29Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
10Inorganic compounds or compositions
16Oxides
22Complex oxides
H01L 35/22
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
35Thermoelectric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermoelectric effects or thermomagnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
12Selection of the material for the legs of the junction
14using inorganic compositions
22comprising compounds containing boron, carbon, oxygen or nitrogen ; or germanium or silicon, e.g. superconductors
H02N 11/00
HELECTRICITY
02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
NELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
11Generators or motors not provided for elsewhere; Alleged perpetua mobilia obtained by electric or magnetic means
Applicants
  • 株式会社日立製作所 HITACHI, LTD. [JP]/[JP]
Inventors
  • 籔内 真 YABUCHI Shin
Agents
  • 青稜特許業務法人 SEIRYO I.P.C.
Priority Data
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) THERMOELECTRIC CONVERSION MATERIAL, THERMOELECTRIC CONVERSION ELEMENT AND THERMOELECTRIC CONVERSION MODULE USING SAME
(FR) MATÉRIAU DE CONVERSION THERMOÉLECTRIQUE, ÉLÉMENT DE CONVERSION THERMOÉLECTRIQUE, ET MODULE DE CONVERSION THERMOÉLECTRIQUE LES UTILISANT
(JA) 熱電変換材料、熱電変換素子、及びそれを用いた熱電変換モジュール
Abstract
(EN)
Disclosed are: a thermoelectric conversion material which is characterized by containing oxygen, at least one element α selected from the group consisting of W, Mo and Cr, and at least one element β selected from the group consisting of Si, Ge, Sn and C, while having a hexagonal structure of the space group P 63/m and a volume per one atom V satisfying 12.4 ≤ V 13.4 Å3; a thermoelectric conversion element using this thermoelectric conversion material; and a thermoelectric conversion module using this thermoelectric conversion element. Consequently, environmental load and cost can to be reduced, and thermoelectric conversion exhibiting high thermoelectric conversion characteristics is able to be achieved.
(FR)
L’invention concerne : un matériau de conversion thermoélectrique qui est caractérisée en ce qu’il contient de l’oxygène, au moins un élément α sélectionné parmi le groupe constitué de W, Mo et Cr, et au moins un élément β sélectionné parmi le groupe constitué de Si, Ge, Sn et C, tout en présentant une structure hexagonale du groupe d’espace P 63/m et un volume pour un atome V satisfaisant 12,4 ≤ V ≤ 13,4 Å3 ; un élément de conversion thermoélectrique utilisant ce matériau de conversion thermoélectrique ; et un module de conversion thermoélectrique utilisant cet élément de conversion thermoélectrique. Par conséquent, la charge environnementale et le coût peuvent être réduits, et une conversion thermoélectrique présentant des caractéristiques de conversion thermoélectrique élevées peut être réalisée.
(JA)
W、Mo及びCrからなる群から選ばれる少なくとも一種以上の元素αと、Si、Ge、Sn及びCからなる群から選ばれる少なくとも一種以上の元素βと、酸素を含み、空間群P 63/mの六方晶構造を有しており、1原子当りの体積Vが12.4≦V≦13.4Åであることを特徴とする熱電変換材料、及びそれを用いた熱電変換素子、及びそれを用いた熱電変換モジュールが開示される。低環境負荷及び低コスト化が可能で、高い熱電変換特性を示す熱電変換を実現することができる。
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