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1. WO2016185399 - PROCESS FOR FABRICATING A PIEZOELECTRIC NANOGENERATOR, PIEZOELECTRIC NANOGENERATOR OBTAINED BY THIS PROCESS AND DEVICE INCLUDING SUCH A PIEZOELECTRIC NANOGENERATOR

Publication Number WO/2016/185399
Publication Date 24.11.2016
International Application No. PCT/IB2016/052897
International Filing Date 18.05.2016
IPC
H01L 41/45 2013.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
41Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
22Processes or apparatus specially adapted for the assembly, manufacture or treatment of piezo-electric or electrostrictive devices or of parts thereof
35Forming piezo-electric or electrostrictive materials
45Organic materials
H01L 41/047 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
41Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02Details
04of piezo-electric or electrostrictive elements
047Electrodes
H01L 41/193 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
41Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
16Selection of materials
18for piezo-electric or electrostrictive elements
193Macromolecular compositions
H01L 41/29 2013.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
41Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
22Processes or apparatus specially adapted for the assembly, manufacture or treatment of piezo-electric or electrostrictive devices or of parts thereof
29Forming electrodes, leads or terminal arrangements
CPC
C25D 5/022
CCHEMISTRY; METALLURGY
25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING
5Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
02Electroplating of selected surface areas
022using masking means
H01G 4/005
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
4Fixed capacitors; Processes of their manufacture
002Details
005Electrodes
H01L 27/142
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
142Energy conversion devices
H01L 27/16
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
16including thermoelectric components with or without a junction of dissimilar materials; including thermomagnetic components
H01L 27/20
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
20including piezo-electric components; including electrostrictive components; including magnetostrictive components
H01L 41/04
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
41Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02Details
04of piezo-electric or electrostrictive devices
Applicants
  • COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES [FR]/[FR]
  • CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE [FR]/[FR]
  • ECOLE POLYTECHNIQUE [FR]/[FR]
Inventors
  • CLOCHARD, Marie-Claude
  • GIUSEPPE, Melilli
  • WEGROWE, Jean-Eric
  • WADE, Travis
  • BALANZAT, Emmanuel
  • GIGLIO, Eric
Agents
  • REBOUSSIN, Yohann
Priority Data
155441218.05.2015FR
Publication Language French (FR)
Filing Language French (FR)
Designated States
Title
(EN) PROCESS FOR FABRICATING A PIEZOELECTRIC NANOGENERATOR, PIEZOELECTRIC NANOGENERATOR OBTAINED BY THIS PROCESS AND DEVICE INCLUDING SUCH A PIEZOELECTRIC NANOGENERATOR
(FR) PROCÉDÉ DE FABRICATION D'UN NANOGENERATEUR PIEZO-ELECTRIQUE, NANOGENERATEUR PIEZO-ELECTRIQUE OBTENU PAR CE PROCÉDÉ ET DISPOSITIF COMPORTANT UN TEL NANOGENERATEUR PIEZO-ELECTRIQUE
Abstract
(EN)
The invention relates to a process for fabricating a piezoelectric nanogenerator, to a piezoelectric nanogenerator obtained by this process and to a device including such a piezoelectric nanogenerator connected to a capacitor, said process comprising the following steps: a) providing a membrane (100) made of polarised β-PVDF or polarised P(VDF-TrFe) copolymer and therefore having piezoelectric properties, said membrane (100) moreover having two external major faces (11, 12) that are separated by a membrane thickness (e); b) irradiating the entirety of the thickness of said membrane (100), via at least one of its two external major faces (11, 12), with heavy ions having a fluence of between 103 ions/cm2 and 1010 ions/cm2, as a result of which a membrane (101) containing latent traces (TL) of the passage of the heavy ions through the entirety of its thickness is obtained; c) revealing the latent traces (TL) using a chemical process of length that is preset so as to preserve a defect zone (ZD) belonging to the latent trace, as a result of which a nanostructured membrane is obtained having nanopores including, around each nanopore, a defect zone (ZD); d) depositing a layer of an electrical conductor on one (12) of the two external major faces (11, 12) of said membrane; e) electrodepositing an electrical conductor or semiconductor in the nanopores, the electrodeposition being stopped before the nanopores have been completely filled, as a result of which a nanostructured membrane is obtained having nanowires (15) partially filling the nanopores; and f) depositing a layer, of an electrical conductor, on the other (11) of the two external major faces (11, 12) and which therefore does not make contact with the nanowires.
(FR)
L'invention concerne un procédé de fabrication d'un nanogénérateur piézo-électrique, un nanogénérateur piézoélectrique obtenu par ce procédé ainsi qu'un dispositif comportant ce nanogénérateur piézo-électrique connecté à un condensateur, ledit procédé comprenant les étapes suivantes : a) fournir une membrane (100) en β-PVDF polarisé ou en copolymère PVDF-TrFe polarisé présentant donc des propriétés piézoélectriques, ladite membrane (100) présentant par ailleurs deux faces externes principales (11, 12) séparées par une épaisseur (e) de membrane; b) irradier ladite membrane (100) par l'une au moins de ses deux faces externes principales (11, 12) à travers toute l'épaisseur de ladite membrane avec des ions lourds présentant une fluence comprise entre 103 ions/cm2 et 1010 ions/cm2, en conséquence de quoi, on obtient une membrane (101) avec des traces latentes (TL) du passage des ions lourds à travers toute l'épaisseur de celle-ci; c) réaliser une révélation chimique des traces latentes (TL) sur une durée prédéterminée pour maintenir une zone de défaut (ZD) appartenant à la trace latente, en conséquence de quoi on obtient une membrane nanostructurée avec des nanopores comportant, autour de chaque nanopore, une zone de défaut (ZD); d) déposer une couche d'un matériau conducteur de l' électricité sur l'une (12) des deux faces externes principales (11, 12) de ladite membrane; e) réaliser une électrodéposition d'un matériau semi-conducteur ou conducteur de l'électricité dans les nanopores en arrêtant l'électrodéposition avant le remplissage complet des nanopores, en conséquence de quoi on obtient une membrane nanostructurée avec des nanofils (15) remplissant partiellement les nanopores; et f) déposer une couche, d'un matériau conducteur de l'électricité sur l' autre (11) des deux faces externes principales (11, 12), qui n'est donc pas en contact avec les nanofils.
Also published as
Latest bibliographic data on file with the International Bureau