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1. (WO2016184114) POLYCRYSTALLINE SEMICONDUCTOR LAYER AND FABRICATING METHOD THEREOF
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2016/184114    International Application No.:    PCT/CN2015/099239
Publication Date: 24.11.2016 International Filing Date: 28.12.2015
IPC:
H01L 21/77 (2006.01), H01L 29/786 (2006.01)
Applicants: BOE TECHNOLOGY GROUP CO., LTD. [CN/CN]; No.10 Jiuxianqiao Rd., Chaoyang District Beijing 100015 (CN)
Inventors: XU, Wenqing; (CN).
TIAN, Hongwei; (CN).
LONG, Chunping; (CN)
Agent: TEE & HOWE INTELLECTUAL PROPERTY ATTORNEYS; Yuan Chen 10th Floor, Tower D, Minsheng Financial Center 28 Jianguomennei Avenue, Dongcheng District Beijing 100005 (CN)
Priority Data:
201510250931.1 15.05.2015 CN
Title (EN) POLYCRYSTALLINE SEMICONDUCTOR LAYER AND FABRICATING METHOD THEREOF
(FR) COUCHE SEMI-CONDUCTRICE POLYCRISTALLINE ET SON PROCÉDÉ DE FABRICATION
Abstract: front page image
(EN)The present application discloses a method of fabricating a polycrystalline semiconductor layer, comprising forming a heat storage layer; forming a buffer layer on the heat storage layer; forming a first amorphous semiconductor layer on a side of the buffer layer distal to the heat storage layer; and crystallizing the first amorphous semiconductor layer to form a first polycrystalline semiconductor layer.
(FR)La présente invention concerne un procédé de fabrication d'une couche semi-conductrice polycristalline, comprenant la formation d'une couche de stockage de chaleur; la formation d'une couche tampon sur la couche de stockage de chaleur; la formation d'une première couche semi-conductrice amorphe sur un côté de la couche tampon en position distale par rapport à la couche de stockage de chaleur; et la cristallisation de la première couche semi-conductrice amorphe pour former une première couche semi-conductrice polycristalline.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)