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Machine translation
1. (WO2016183530) COMPOSITION OF, AND METHOD FOR FORMING, A SEMICONDUCTOR STRUCTURE WITH MULTIPLE INSULATOR COATINGS
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2016/183530    International Application No.:    PCT/US2016/032557
Publication Date: 17.11.2016 International Filing Date: 13.05.2016
IPC:
C09K 11/00 (2006.01), H01L 33/04 (2010.01), H01L 33/52 (2010.01), H01L 33/56 (2010.01), H01L 33/44 (2010.01)
Applicants: PACIFIC LIGHT TECHNOLOGIES, CORP. [US/US]; 2828 SW Corbett Avenue Suite 3 Portland, Oregon 97201 (US).
ZHAO, Weiwen [US/US]; (US).
KURTIN, Juanita N. [US/US]; (US)
Inventors: ZHAO, Weiwen; (US).
KURTIN, Juanita N.; (US)
Agent: CALDWELL, Gregory D.; (US)
Priority Data:
62/161,178 13.05.2015 US
Title (EN) COMPOSITION OF, AND METHOD FOR FORMING, A SEMICONDUCTOR STRUCTURE WITH MULTIPLE INSULATOR COATINGS
(FR) COMPOSITION D'UNE STRUCTURE SEMI-CONDUCTRICE PRÉSENTANT DES REVÊTEMENTS ISOLANTS MULTIPLES ET PROCÉDÉ POUR FORMER UNE TELLE STRUCTURE
Abstract: front page image
(EN)Fabricating a semiconductor structure including forming a nanocrystalline core from a first semiconductor material, forming a nanocrystalline shell from a second, different, semiconductor material that at least partially surrounds the nanocrystalline core, wherein the nanocrystalline core and the nanocrystalline shell form a quantum dot. Fabrication further involves forming an insulator layer encapsulating the quantum dot to create a coated quantum dot, and forming an additional insulator layer on the coated quantum.
(FR)Fabrication d'une structure semi-conductrice comprenant la formation d'un noyau nanocristallin à partir d'un premier matériau semi-conducteur, la formation d'une enveloppe nanocristalline à partir d'un second matériau semi-conducteur différent qui entoure au moins partiellement le noyau nanocristallin, le noyau nanocristallin et l'enveloppe nanocristalline formant un point quantique. La fabrication comprend en outre la formation d'une couche isolante encapsulant le point quantique afin de créer un point quantique revêtu, et la formation d'une couche isolante supplémentaire sur le point quantique revêtu.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)