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1. (WO2016182726) SUBSTRATE HANDLING AND HEATING SYSTEM
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2016/182726    International Application No.:    PCT/US2016/029326
Publication Date: 17.11.2016 International Filing Date: 26.04.2016
IPC:
H01L 21/324 (2006.01), H01L 21/67 (2006.01), H01L 27/15 (2006.01)
Applicants: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. [US/US]; 35 Dory Road Gloucester, Massachusetts 01930 (US)
Inventors: EVANS, Morgan D.; (US).
SCHALLER, Jason M.; (US).
LISCHER, D. Jeffrey; (US).
MORADIAN, Ala; (US).
WEAVER, William T.; (US).
VOPAT, Robert Brent; (US)
Agent: FRAME, Robert C.; Nields, Lemack & Frame, LLC 176 E. Main Street Suite 5 Westboro, Massachusetts 01581 (US)
Priority Data:
14/707,027 08.05.2015 US
Title (EN) SUBSTRATE HANDLING AND HEATING SYSTEM
(FR) SYSTÈME DE CHAUFFAGE ET DE MANIPULATION DE SUBSTRAT
Abstract: front page image
(EN)A system for heating substrates while being transported between the load lock and the platen is disclosed. The system comprises an array of light emitting diodes (LEDs) disposed above the alignment station. The LEDs may be GaN or GaP LEDs, which emit light at a wavelength which is readily absorbed by silicon, thus efficiently and quickly heating the substrate. The LEDs may be arranged so that the rotation of the substrate during alignment results in a uniform temperature profile of the substrate. Further, heating during alignment may also increase throughput and eliminate preheating stations that are currently associated with the processing chamber.
(FR)L'invention concerne un système de chauffage de substrats lors du transport entre le sas de chargement et la platine. Le système comprend un ensemble de diodes électroluminescentes (DEL) disposées sur la station d'alignement. Les DEL peuvent être des DEL au GaN ou au GaP, qui émettent de la lumière à une longueur d'onde qui est facilement absorbée par le silicium, ce qui permet de chauffer efficacement et rapidement le substrat. Les diodes électroluminescentes peuvent être agencées de telle sorte que la rotation du substrat lors de l'alignement résulte en un profil de température uniforme du substrat. En outre, le chauffage durant l'alignement peut également augmenter le rendement et éliminer les stations de préchauffage qui sont actuellement associées à la chambre de traitement.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)