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1. (WO2016182465) PHOTOVOLTAIC CELL STRUCTURE AND METHOD TO PRODUCE THE SAME
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2016/182465    International Application No.:    PCT/PL2016/050016
Publication Date: 17.11.2016 International Filing Date: 06.05.2016
IPC:
H01L 31/0224 (2006.01), H01L 31/0236 (2006.01), H01L 31/074 (2012.01), H01L 31/18 (2006.01)
Applicants: INSTYTUT FIZYKI PAN [PL/PL]; Al. Lotników 32/46, 02-668 Warszawa (PL)
Inventors: GIERAŁTOWSKA, Sylwia; (PL).
GODLEWSKI, Marek; (PL).
PIETRUSZKA, Rafał; (PL).
WACHNICKI, Łukasz; (PL).
WITKOWSKI, Bartłomiej; (PL)
Agent: WITEK, Andrzej; (PL)
Priority Data:
P.412250 08.05.2015 PL
Title (EN) PHOTOVOLTAIC CELL STRUCTURE AND METHOD TO PRODUCE THE SAME
(FR) STRUCTURE DE CELLULE PHOTOVOLTAÏQUE ET SON PROCÉDÉ DE PRODUCTION
Abstract: front page image
(EN)The object of the present invention is a photovoltaic cell structure, comprising a p-type semiconductor substrate with a bottom electric contact, upon which a layer comprising ZnO nanostructures is made, covered with a Zn Mg O layer and with a transparent conductive layer, preferably ZnO:Al layer, with an electric contact, characterized in that the active layer is a Si/ZnO/ZnMgO junction, the layer of ZnO nanostructures of the height of 100 nm up to 2000 nm being covered with the ZnMgO layer from 1 nm to 2000 nm thick, and the method to produce the same.
(FR)L'objet de la présente invention est une structure de cellule photovoltaïque, comprenant un substrat semi-conducteur de type p ayant un contact électrique inférieur, sur lequel est constituée une couche comprenant des nanostructures de ZnO, recouverte d'une couche de Zn Mg O et ayant une couche conductrice transparente, de préférence une couche de ZnO:Al, ayant un contact électrique, caractérisée en ce que la couche active est une jonction Si/ZnO/ZnMgO, la couche de nanostructures de ZnO d'une hauteur comprise entre 100 nm et 2 000 nm étant recouverte par la couche de ZnMgO d'une épaisseur comprise entre 1 nm et 2 000 nm, et son procédé de production.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)