WIPO logo
Mobile | Deutsch | Español | Français | 日本語 | 한국어 | Português | Русский | 中文 | العربية |
PATENTSCOPE

Search International and National Patent Collections
World Intellectual Property Organization
Search
 
Browse
 
Translate
 
Options
 
News
 
Login
 
Help
 
Machine translation
1. (WO2016182395) SENSOR PACKAGING AND METHOD FOR MANUFACTURING SAME
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2016/182395    International Application No.:    PCT/KR2016/005106
Publication Date: 17.11.2016 International Filing Date: 13.05.2016
IPC:
H01L 23/48 (2006.01), H01L 23/532 (2006.01), H01L 23/00 (2006.01)
Applicants: INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY [KR/KR]; 222, Wangsimni-ro Seongdong-gu Seoul 04763 (KR)
Inventors: YOON, Sang Won; (KR)
Agent: SHIM, Kyoung-Shik; (KR)
Priority Data:
10-2015-0067630 14.05.2015 KR
Title (EN) SENSOR PACKAGING AND METHOD FOR MANUFACTURING SAME
(FR) CONDITIONNEMENT DE CAPTEUR ET SON PROCÉDÉ DE FABRICATION
(KO) 센서 패키징 및 그 제조 방법
Abstract: front page image
(EN)A method for manufacturing a sensor packaging, according to one embodiment of the present invention, comprises: a step of etching both sides of a main substrate to form a via hole which passes through the main substrate; a step of forming an insulation layer on the wall surface of the via hole and both sides of the main substrate; a step of bonding, to the main substrate, a sub-substrate in which a metal seed layer and a bonding layer, which has a pattern for exposing a part of the seed layer, are stacked; a step of forming a filling layer which fills the via hole with a metal to cover the top surface of the main substrate; and a step of removing the sub-substrate from the main substrate.
(FR)Selon un mode de réalisation, la présente invention concerne un procédé de fabrication d’un conditionnement de capteur, qui consiste : en une étape de gravure des deux côtés d’un substrat principal pour former un trou d’interconnexion qui traverse le substrat principal ; en une étape de formation d’une couche d’isolation sur la surface de la paroi du trou d’interconnexion et les deux côtés du substrat principal ; en une étape de soudage, au substrat principal, d’un sous-substrat dans lequel sont empilées une couche germe de métal et une couche de soudage, laquelle comporte un motif d’exposition d’une partie de la couche germe ; en une étape de formation d’une couche de remplissage qui remplit le trou d'interconnexion d’un métal pour recouvrir la surface supérieure du substrat principal ; et en une étape de retrait du sous-substrat du substrat principal.
(KO)본 발명의 일 실시예에 따른 센서 패키징의 제조 방법은 메인 기판의 양면을 각각 식각하여 상기 메인 기판을 관통하는 비아 홀(via hole)을 형성하는 단계; 상기 비아 홀의 벽면 및 상기 메인 기판의 양면에 절연층을 형성하는 단계; 금속의 시드층(seed layer), 및 상기 시드층의 일부를 노출시키기 위한 패턴을 구비하는 본딩층이 적층된 서브 기판을 상기 메인 기판에 결합하는 단계; 상기 비아 홀에 금속을 충진하여 상기 메인 기판의 상면을 커버하는 충진층을 형성하는 단계; 및 상기 서브 기판을 상기 메인 기판으로부터 제거하는 단계를 포함한다.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG).
Publication Language: Korean (KO)
Filing Language: Korean (KO)