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1. (WO2016181723) DRY ETCHING METHOD, DRY ETCHING AGENT AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2016/181723    International Application No.:    PCT/JP2016/060989
Publication Date: 17.11.2016 International Filing Date: 04.04.2016
IPC:
H01L 21/3065 (2006.01)
Applicants: CENTRAL GLASS COMPANY, LIMITED [JP/JP]; 5253, Oaza Okiube, Ube-shi, Yamaguchi 7550001 (JP)
Inventors: OOMORI, Hiroyuki; (JP).
YAO, Akifumi; (JP).
KAMIDA, Tatsunori; (JP)
Agent: KOBAYASHI, Hiromichi; (JP)
Priority Data:
2015-098974 14.05.2015 JP
Title (EN) DRY ETCHING METHOD, DRY ETCHING AGENT AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
(FR) PROCÉDÉ DE GRAVURE SÈCHE, AGENT DE GRAVURE SÈCHE ET PROCÉDÉ DE FABRICATION DE DISPOSITIF À SEMI-CONDUCTEUR
(JA) ドライエッチング方法、ドライエッチング剤及び半導体装置の製造方法
Abstract: front page image
(EN)The present invention is a dry etching method which is characterized by selectively etching silicon nitride to a photoresist, silicon oxide and silicon with use of a plasma gas that is obtained by changing a dry etching agent into a plasma, said dry etching agent being composed substantially only of 1, 3, 3, 3-tetrafluoropropene and an inert gas.
(FR)La présente invention porte sur un procédé de gravure sèche qui est caractérisé par la gravure sélective de nitrure de silicium jusqu'à une résine photosensible, de l'oxyde de silicium et du silicium à l'aide d'un gaz plasma qui est obtenu par conversion d'un agent de gravure sèche en un plasma, ledit agent de gravure sèche étant constitué sensiblement uniquement de 1,3,3,3-tétrafluoropropène et d'un gaz inerte.
(JA)本発明は、実質的に1,3,3,3-テトラフルオロプロペンと不活性ガスのみからなるドライエッチング剤をプラズマ化させて得られるプラズマガスを用いて、フォトレジスト、シリコン酸化物、シリコンに対してシリコン窒化物を選択的にエッチングすることを特徴とするドライエッチング方法である。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG).
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)