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Machine translation
1. (WO2016179596) LOW-STRESS LOW-HYDROGEN LPCVD SILICON NITRIDE
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2016/179596    International Application No.:    PCT/US2016/031509
Publication Date: 10.11.2016 International Filing Date: 09.05.2016
IPC:
H01L 21/318 (2006.01), C23C 16/34 (2006.01), H05K 3/02 (2006.01)
Applicants: TEXAS INSTRUMENTS INCOPORATED [US/US]; P. O. Box 655474, Mail Station 3999 Dallas, TX 75265-5474 (US).
TEXAS INSTRUMENTS JAPAN LIMITED [JP/JP]; 24-1, Nishi-shinjuku 6-chome Shinjuku-ku Tokyo, 160-8366 (JP) (JP only)
Inventors: DELLAS, Nicholas, Stephen; (US)
Agent: DAVIS, Michael A., Jr.; (US)
Priority Data:
14/706,941 07.05.2015 US
Title (EN) LOW-STRESS LOW-HYDROGEN LPCVD SILICON NITRIDE
(FR) NITRURE DE SILICIUM À LPCVD FAIBLE EN HYDROGÈNE À FAIBLE CONTRAINTE
Abstract: front page image
(EN)In described examples, a microelectronic device (102) contains a high performance silicon nitride layer, which is stoichiometric within 2 atomic percent, has a low stress of 600 MPa to 1000 MPa, and has a low hydrogen content, less than 5 atomic percent, formed by an LPCVD process. The LPCVD process uses ammonia NH3 and dichlorosilane DCS gases in a ratio of 4 to 6, at a pressure of 150 millitorr to 250 millitorr, and at a temperature of 800°C to 820°C.
(FR)Selon des exemples décrits, l’invention concerne un dispositif microélectronique (102) qui contient une couche de nitrure de silicium à haute performance, qui est stœchiométrique dans une marge de stœchiométrie de 2 pour cent atomiques, présente une faible contrainte comprise entre 600 MPa et 1000 MPa, et présente une faible teneur en hydrogène, moins de 5 pour cent atomiques, formé par un processus de LPCVD. Le processus de LPCVD utilise de l’ammoniac (NH3) et du dichlorosilane (DCS) gazeux dans un ratio compris entre 4 et 6, à une pression comprise entre 150 millitors et 250 millitors, et à une température comprise entre 800 °C et 820 °C.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)