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1. (WO2016179458) PLASMA TREATMENTS FOR FLEXURES OF HARD DISK DRIVES
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2016/179458    International Application No.:    PCT/US2016/031111
Publication Date: 10.11.2016 International Filing Date: 06.05.2016
IPC:
H05K 3/38 (2006.01), H05K 3/10 (2006.01), H01L 21/3065 (2006.01), H01L 21/762 (2006.01), H01L 21/22 (2006.01)
Applicants: HUTCHINSON TECHNOLOGY INCORPORATED [US/US]; 40 West Highland Park Drive N.E. Hutchinson, Minnesota 55350-9784 (US)
Inventors: FISCHER, Kurt F.; (US).
HAAS, Alex W.; (US).
HORNER, Matthew J.; (US).
LADWIG, Peter F.; (US).
MINTON, Carl C.; (US).
PESAVENTO, Paul V.; (US).
SMAHEL, David D.; (US).
SPERL, Christopher J.; (US).
SYDLO, Darrell C.; (US).
TIWARI, Ritesh K.; (US).
TOBIAS, Kyle T.; (US).
YUSUF, Maryam O.; (US)
Agent: MOONEY, Christopher M.; (US)
Priority Data:
62/157,819 06.05.2015 US
Title (EN) PLASMA TREATMENTS FOR FLEXURES OF HARD DISK DRIVES
(FR) TRAITEMENTS PAR PLASMA POUR ÉLÉMENTS FLEXIBLES D'UNITÉS DE DISQUES DURS
Abstract: front page image
(EN)Methods for producing flexible circuits can include creating treating a surface of the flexible circuit with at least one of an atmospheric plasma and a beam of ions. The atmospheric plasma is formed by directing a flow of gas between an electrode and the surface of the flexible circuit and generating a voltage between the electrode and the flexible circuit to create a plasma from the gas. A mean ion energy of the ions in the ion beam ranges from about 500 electron volts to about 1,500 electron volts.
(FR)L'invention concerne des procédés de production de circuits souples, pouvant comprendre l'étape consistant à traiter une surface du circuit souple avec au moins un moyen parmi un plasma atmosphérique et un faisceau d'ions. Le plasma atmosphérique est formé en dirigeant un écoulement de gaz entre une électrode et la surface du circuit souple et en générant une tension entre l'électrode et le circuit souple pour créer un plasma à partir du gaz. Une énergie ionique moyenne des ions dans le faisceau d'ions varie entre environ 500 électronvolts et environ 1500 électronvolts.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)