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1. (WO2016178478) METHOD OF FORMING TRANSPARENT ELECTRODE HAVING IMPROVED TRANSMISSIVITY, AND SEMICONDUCTOR DEVICE INCLUDING TRANSPARENT ELECTRODE FORMED BY USING SAME
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2016/178478    International Application No.:    PCT/KR2016/002996
Publication Date: 10.11.2016 International Filing Date: 24.03.2016
IPC:
H01B 13/00 (2006.01), H01B 1/08 (2006.01), H01B 1/02 (2006.01)
Applicants: KOREA UNIVERSITY RESEARCH AND BUSINESS FOUNDATION [KR/KR]; (Anam-dong 5-ga) Korea University, 145, Anam-ro, Seongbuk-gu, Seoul 02841 (KR)
Inventors: KIM, Tae Geun; (KR).
KIM, Min Ju; (KR)
Agent: B&IP-JOOWON PATENT AND LAW FIRM; (Nonhyeon-dong) 9th Floor, Construction Center, Eonju-ro 711 Gangnam-gu Seoul 06050 (KR)
Priority Data:
10-2015-0063409 06.05.2015 KR
Title (EN) METHOD OF FORMING TRANSPARENT ELECTRODE HAVING IMPROVED TRANSMISSIVITY, AND SEMICONDUCTOR DEVICE INCLUDING TRANSPARENT ELECTRODE FORMED BY USING SAME
(FR) PROCÉDÉ DE FORMATION D’ÉLECTRODE TRANSPARENTE DONT LA TRANSMISSIVITÉ EST AMÉLIORÉE, ET DISPOSITIF SEMI-CONDUCTEUR INCLUANT UNE ÉLECTRODE TRANSPARENTE FORMÉE AU MOYEN DE CE PROCÉDÉ
(KO) 투과도가 향상된 투명 전극 형성 방법 및 이를 이용하여 형성된 투명 전극을 포함하는 반도체 소자
Abstract: front page image
(EN)The present invention discloses a method of forming a transparent electrode. A method of forming a transparent electrode according to a preferred embodiment of the present invention forms a metal layer on an ITO transparent electrode that is the most widely used type of transparent electrode by using a metal in a period lower than Indium in the periodic table, and permeating metals forming the metal layer through heat treatment into the ITO transparent electrode to expand the effective bandgap, so as to have the effects of expanding the transmissivity of the transparent electrode to the ultraviolet range and, at the same time, improving the conductivity of the overall transparent electrode by virtue of the metals permeated into the ITO transparent electrode. This method of forming a transparent electrode of the present invention can improve the transmissivity and the conductivity of a transparent electrode by only adding a simple process of forming a metal layer and a heat treating process to a conventional process of forming a transparent electrode, without adding a complicated patterning or etching process, so as to have the advantage of being directly applicable to transparent electrode forming processes being commercialized.
(FR)La présente invention concerne un procédé de formation d’une électrode transparente. Un procédé de formation d’une électrode transparente selon un mode de réalisation préféré de la présente invention forme une couche de métal sur une électrode transparente en ITO qui est le type d’électrode transparente le plus largement utilisé au moyen d’un métal dont la période est plus basse que celle de l’indium dans le tableau périodique, et par pénétration de métaux formant la couche de métal par traitement thermique dans l’électrode transparente en ITO pour étendre la bande interdite efficace, afin d’obtenir les effets d’extension de la transmissivité de l’électrode transparente à la plage des ultraviolets, et, simultanément, d’amélioration de la conductivité de l’ensemble de l’électrode transparente en vertu des métaux ayant pénétré dans l’électrode transparente en ITO. Ce procédé de formation d’une électrode transparente selon la présente invention peut améliorer la transmissivité et la conductivité d’une électrode transparente juste en ajoutant un processus simple de formation d’une couche de métal et un processus de traitement thermique à un processus conventionnel de formation d’une électrode transparente, sans ajouter un processus de traçage de motif ou de gravure compliqué, afin d’obtenir l’avantage d’une application directe aux processus de formation d’électrode transparente qui sont commercialisés.
(KO)본 발명은 투명 전극 형성 방법을 공개한다. 본 발명의 바람직한 실시예에 따른 투명 전극 형성 방법은, 투명전극으로 가장 널리 사용되는 ITO 투명 전극 위에 Indium보다 주기율표상의 주기가 낮은 금속을 이용하여 금속층을 형성하고 열처리를 통해서 금속층을 구성하는 금속들을 ITO 투명 전극 내부로 침투시켜 유효 밴드갭을 확장시킴으로써, 투명 전극의 투과도를 자외선 영역으로 확장시킴과 동시에, ITO 투명 전극 내부에 침투한 금속이 전체 투명 전극의 전도도를 향상시키는 효과가 있다. 이러한 본 발명의 투명 전극 형성 방법은 종래의 투명 전극 형성 공정에, 복잡한 패터닝이나 에칭 공정을 추가함 없이, 단순한 금속층을 형성하는 공정과 열처리 공정을 추가하는 것 만으로도 투명 전극의 투과도 및 전도도를 향상시킬 수 있어, 현재 상용화된 투명 전극 형성 공정에 바로 적용이 가능한 장점이 있다.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG).
Publication Language: Korean (KO)
Filing Language: Korean (KO)