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1. WO2016175744 - MEMRISTIVE CROSSBAR ARRAY HAVING MULTI-SELECTOR MEMRISTOR CELLS

Publication Number WO/2016/175744
Publication Date 03.11.2016
International Application No. PCT/US2015/027808
International Filing Date 27.04.2015
IPC
G11C 13/00 2006.01
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
13Digital stores characterised by the use of storage elements not covered by groups G11C11/, G11C23/, or G11C25/173
G11C 11/15 2006.01
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
11Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
02using magnetic elements
14using thin-film elements
15using multiple magnetic layers
CPC
G11C 13/003
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
13Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00 - G11C25/00
0002using resistive RAM [RRAM] elements
0021Auxiliary circuits
003Cell access
G11C 13/004
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
13Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00 - G11C25/00
0002using resistive RAM [RRAM] elements
0021Auxiliary circuits
004Reading or sensing circuits or methods
G11C 13/0069
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
13Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00 - G11C25/00
0002using resistive RAM [RRAM] elements
0021Auxiliary circuits
0069Writing or programming circuits or methods
G11C 2213/74
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
2213Indexing scheme relating to G11C13/00 for features not covered by this group
70Resistive array aspects
74Array wherein each memory cell has more than one access device
G11C 2213/76
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
2213Indexing scheme relating to G11C13/00 for features not covered by this group
70Resistive array aspects
76Array using an access device for each cell which being not a transistor and not a diode
H01L 27/2418
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
24including solid state components for rectifying, amplifying or switching without a potential-jump barrier or surface barrier, ; e.g. resistance switching non-volatile memory structures
2409comprising two-terminal selection components, e.g. diodes
2418of the metal-insulator-metal type
Applicants
  • HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP [US]/[US]
Inventors
  • GE, Ning
  • YANG, Jianhua
  • LI, Zhiyong
  • WILLIAMS, R. Stanley
Agents
  • COLLINS, David W.
Priority Data
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) MEMRISTIVE CROSSBAR ARRAY HAVING MULTI-SELECTOR MEMRISTOR CELLS
(FR) RÉSEAU MATRICIEL MEMRISTIF AYANT DES CELLULES DE MEMRISTANCE À PLUSIEURS SÉLECTEURS
Abstract
(EN)
A memristive crossbar array is described. The crossbar array includes a number of row lines and a number of column lines intersecting the row lines to form a number of cross points. A number of memristor cells are coupled between the row lines and the column lines at the cross points. A memristor cell includes a memristive memory element to store information and multiple selectors electrically coupled to the memristive memory element. The multiple selectors are to provide access to the memristive memory element.
(FR)
L'invention a trait à un réseau matriciel memristif. Ce réseau matriciel comprend un certain nombre de lignes de rangées et un certain nombre de lignes de colonnes croisant les lignes de rangées pour former un certain nombre de points de croisement. Un certain nombre de cellules de memristance sont couplées entre les lignes de rangées et les lignes de colonnes, aux points de croisement. Une cellule de memristance comprend un élément de mémoire memristif pour mémoriser des informations, et plusieurs sélecteurs couplés électriquement audit élément de mémoire memristif. Les sélecteurs permettent l'accès à l'élément de mémoire memristif.
Also published as
Latest bibliographic data on file with the International Bureau