WIPO logo
Mobile | Deutsch | Español | Français | 日本語 | 한국어 | Português | Русский | 中文 | العربية |
PATENTSCOPE

Search International and National Patent Collections
World Intellectual Property Organization
Search
 
Browse
 
Translate
 
Options
 
News
 
Login
 
Help
 
Machine translation
1. (WO2016175458) METHOD FOR FORMING METAL MESH AND SEMICONDUCTOR DEVICE HAVING METAL MESH
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2016/175458    International Application No.:    PCT/KR2016/003093
Publication Date: 03.11.2016 International Filing Date: 25.03.2016
IPC:
H01L 29/41 (2006.01), H01L 21/02 (2006.01), B82B 1/00 (2006.01)
Applicants: KOREA UNIVERSITY RESEARCH AND BUSINESS FOUNDATION [KR/KR]; (Anam-dong 5-ga) Korea University, 145, Anam-ro, Seongbuk-gu, Seoul 02841 (KR)
Inventors: KIM, Tae Geun; (KR).
LEE, Byeong Ryong; (KR)
Agent: B&IP-JOOWON PATENT AND LAW FIRM; (Nonhyeon-dong) 9th Floor, Construction Center, Eonju-ro 711 Gangnam-gu Seoul 06050 (KR)
Priority Data:
10-2015-0059717 28.04.2015 KR
Title (EN) METHOD FOR FORMING METAL MESH AND SEMICONDUCTOR DEVICE HAVING METAL MESH
(FR) PROCÉDÉ DE FORMATION DE GRILLE MÉTALLIQUE ET DISPOSITIF À SEMI-CONDUCTEURS COMPORTANT UNE GRILLE MÉTALLIQUE
(KO) 메탈 메쉬 형성 방법 및 메탈 메쉬를 구비하는 반도체 소자
Abstract: front page image
(EN)The present invention enables: a network to be formed from a nanosized material on a substrate including a light-emitting element or a light receiving element; a pattern layer to be formed such that a part of the network is embedded, and then, a nanomaterial for forming a network to be removed from the pattern layer, thereby forming a nanosized pattern to be formed at the pattern layer; and the pattern layer to be removed after metal is deposited on the pattern, thereby forming, on the substrate, a metal mesh having a nanosized line width. Therefore, compared with a method for forming a metal mesh by using a conventional photolithography process, the present invention can form, through a simple process, a metal mesh having a nanosized line width and can also easily adjust the line width of the metal mesh by using a nanomaterial having a width corresponding to a desired line width of the metal mesh, such that a visibility problem and a moire phenomenon can be simply resolved.
(FR)La présente invention permet de : former un réseau à partir d'un matériau de dimensions nanométriques sur un substrat comprenant un élément d'émission de lumière ou un élément de réception de lumière ; former une couche de motif de façon à intégrer une partie du réseau et retirer ensuite un nanomatériau de sorte à former un réseau de la couche de motif, ce qui permet de former un motif de dimensions nanométriques à former au niveau de la couche de motif ; et retirer la couche de motif après dépôt du métal sur le motif, ce qui permet de former une grille métallique ayant une largeur de ligne de taille nanométrique sur le substrat. Par conséquent, par comparaison avec un procédé de formation d'une grille métallique au moyen d'un traitement de photolithographie classique, la présente invention permet de former, par le biais d'un traitement simple, une grille métallique ayant une largeur de ligne de dimensions nanométriques, et permet également de régler facilement la largeur de ligne de la grille métallique à l'aide d'un nanomatériau ayant une largeur correspondant à une largeur de ligne souhaitée de la grille métallique, ce qui permet de résoudre de manière simple un problème de visibilité et un phénomène de moiré.
(KO)본 발명은 발광 소자 또는 수광 소자를 포함하는 기판 위에 나노 사이즈의 물질로 네트워크를 형성하고, 네트워크의 일부가 잠기도록 패턴층을 형성한 후, 패턴층에서 네트워크를 형성하는 나노 물질을 제거함으로써, 패턴층에 나노 사이즈의 패턴을 형성하고, 그 위에 금속을 증착한 후 패턴층을 제거함으로써, 기판위에 나노 사이즈의 선폭을 갖는 메탈 메쉬를 형성할 수 있다. 따라서, 본 발명은 종래의 사진 식각 공정을 이용하는 메탈 메쉬 형성 방법에 비하여 간단한 공정으로 나노 사이즈의 선폭을 갖는 메탈 메쉬를 형성할 수 있을 뿐만 아니라, 소망하는 메탈 메쉬의 선폭에 대응되는 폭을 갖는 나노 물질을 이용함으로써 용이하게 메탈 메쉬의 선폭을 조절할 수 있어, 간단하게 시인성 문제와 모아레(Moire) 현상을 해결 할 수 있다.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG).
Publication Language: Korean (KO)
Filing Language: Korean (KO)