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1. WO2016175249 - HIGH-FREQUENCY PHASE-LOCKED OSCILLATOR CIRCUIT

Publication Number WO/2016/175249
Publication Date 03.11.2016
International Application No. PCT/JP2016/063237
International Filing Date 27.04.2016
IPC
H03L 7/099 2006.01
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
LAUTOMATIC CONTROL, STARTING, SYNCHRONISATION, OR STABILISATION OF GENERATORS OF ELECTRONIC OSCILLATIONS OR PULSES
7Automatic control of frequency or phase; Synchronisation
06using a reference signal applied to a frequency- or phase-locked loop
08Details of the phase-locked loop
099concerning mainly the controlled oscillator of the loop
H01L 29/82 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
82controllable by variation of the magnetic field applied to the device
H01L 43/08 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
43Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
08Magnetic-field-controlled resistors
H03B 15/00 2006.01
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
BGENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
15Generation of oscillations using galvano-magnetic devices, e.g. Hall-effect devices, devices using spin transfer effects, devices using giant magnetoresistance, or using super-conductivity effects
CPC
H01F 10/3259
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
10Thin magnetic films, e.g. of one-domain structure
32Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
324Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
3254the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
3259Spin-exchange-coupled multilayers comprising at least a nanooxide layer [NOL], e.g. with a NOL spacer
H01L 29/82
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
82controllable by variation of the magnetic field applied to the device
H01L 43/02
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
43Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
02Details
H01L 43/08
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
43Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
08Magnetic-field-controlled resistors
H01L 43/10
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
43Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
10Selection of materials
H03B 15/00
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
BGENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
15Generation of oscillations using galvano-magnetic devices, e.g. Hall-effect devices, or using superconductivity effects
Applicants
  • 国立研究開発法人産業技術総合研究所 NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY [JP]/[JP]
Inventors
  • 田丸 慎吾 TAMARU Shingo
  • 久保田 均 KUBOTA Hitoshi
  • 福島 章雄 FUKUSHIMA Akio
  • 湯浅 新治 YUASA Shinji
Priority Data
2015-09338430.04.2015JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) HIGH-FREQUENCY PHASE-LOCKED OSCILLATOR CIRCUIT
(FR) CIRCUIT OSCILLATEUR HAUTE FRÉQUENCE À VERROUILLAGE DE PHASE
(JA) 高周波位相同期発振回路
Abstract
(EN)
The objective of the present invention is to resolve the problem that at the high-frequencies at which MR elements oscillate, the peak width of an oscillation spectrum is wide, and to provide a high-frequency phase-locked oscillator circuit having a very narrow peak width and having a stable frequency. This high-frequency phase-locked oscillator circuit is achieved by providing: a magneto-resistive element 6 which emits a high frequency having an oscillation frequency fout; a reference signal source 1 which outputs a reference signal having a reference frequency fref; a phase-locked loop circuit provided with a phase comparator 3, a loop filter 4 and a frequency divider 9; an adder 5 which adds together a phase error signal A output from the loop filter and a bias voltage B for causing a high frequency to be emitted from the magneto-resistive element, and inputs the added bias voltage (A+B) into the magneto-resistive element 6; and a filter 7 which is on the input side of the frequency divider 9 and which cuts out the reference frequency fref between the frequency divider 9 and the magneto-resistive element 6, and allows the oscillation frequency fout to pass.
(FR)
La présente invention vise à résoudre le problème de la grande largeur de la largeur de crête d'un spectre d'oscillation aux hautes fréquences auxquelles oscillent des éléments magnéto-restrictifs. L'invention concerne en outre un circuit oscillateur haute fréquence à verrouillage de phase présentant une largeur de crête très étroite et une fréquence stable. Ledit circuit oscillateur haute fréquence à verrouillage de phase obtenu par : un élément magnéto-résistif (6) qui émet une haute fréquence présentant une fréquence d'oscillation fout ; une source de signal de référence (1) qui délivre en sortie un signal de référence présentant une fréquence de référence fref ; un circuit à boucle à verrouillage de phase doté d'un comparateur de phase (3), d'un filtre à boucle (4) et d'un diviseur de fréquence (9) ; un additionneur qui additionne un signal d'erreur de phase (A) émis en sortie par le filtre à boucle et une tension de polarisation (B) pour provoquer l'émission d'une haute fréquence par l'élément magnéto-résistif, et délivre la tension de polarisation additionnée (A+B) dans l'élément magnéto-résistif (6) ; et un filtre (7) qui est sur le côté entrée du diviseur de fréquence (9) et qui coupe la fréquence de référence fref entre le diviseur de fréquence (9) et l'élément magnéto-resistif (6), et permet le passage de la fréquence d'oscillation fout.
(JA)
 MR素子が発振する高周波は発振スペクトルのピーク幅が広いという問題を解決し、ピーク幅が極めて狭く周波数が安定な高周波位相同期発振回路を提供する。発振周波数foutの高周波を発振する磁気抵抗素子6と、基準周波数frefの基準信号を出力する基準信号源1と、位相比較器3、ループフィルタ4及び分周器9を備えた位相同期ループ回路と、ループフィルタから出力された位相誤差信号Aと磁気抵抗素子から高周波を発振させるためのバイアス電圧Bとを加算し、加算されたバイアス電圧(A+B)を磁気抵抗素子6に入力する加算器5と、分周器9の入力側であって、かつ分周器9と磁気抵抗素子6との間に基準周波数frefをカットし発振周波数foutを通すフィルタ7とを設けることにより、高周波位相同期発振回路を実現する。
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