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1. (WO2016173170) OXIDE SEMICONDUCTOR THIN FILM, THIN-FILM TRANSISTOR, AND PREPARATION METHOD AND DEVICE
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2016/173170    International Application No.:    PCT/CN2015/088853
Publication Date: 03.11.2016 International Filing Date: 02.09.2015
IPC:
H01L 29/24 (2006.01), H01L 29/786 (2006.01), H01L 21/34 (2006.01), H01L 21/02 (2006.01)
Applicants: BOE TECHNOLOGY GROUP CO., LTD. [CN/CN]; No.10 Jiuxianqiao Rd., Chaoyang District Beijing 100015 (CN).
SOUTH CHINA UNIVERSITY OF TECHNOLOGY [CN/CN]; No.381 Wushan Rd., Tianhe District Guangzhou, Guangdong 510640 (CN)
Inventors: YUAN, Guangcai; (CN).
YAN, Liangchen; (CN).
XU, Xiaoguang; (CN).
WANG, Lei; (CN).
PENG, Junbiao; (CN).
LAN, Linfeng; (CN)
Agent: DRAGON INTELLECTUAL PROPERTY LAW FIRM; 10F, Bldg. 2, Maples International Center No. 32 Xizhimen North Street, Haidian District Beijing 100082 (CN)
Priority Data:
201510220082.5 30.04.2015 CN
Title (EN) OXIDE SEMICONDUCTOR THIN FILM, THIN-FILM TRANSISTOR, AND PREPARATION METHOD AND DEVICE
(FR) COUCHE MINCE DE SEMI-CONDUCTEUR À OXYDE, TRANSISTOR À COUCHES MINCES, ET PROCÉDÉ DE PRÉPARATION ET DISPOSITIF
(ZH) 一种氧化物半导体薄膜、薄膜晶体管、制备方法及装置
Abstract: front page image
(EN)Provided are an oxide semiconductor thin film, a thin-film transistor, a preparation method and a device, which are in the field of panel displays. The ingredient of the oxide semiconductor thin film is an oxide comprising zirconium and indium. The method for preparing the oxide semiconductor thin film comprises: the oxide comprising zirconium and indium is prepared into a target material; and the target material is processed by sputtering to obtain the oxide semiconductor thin film.
(FR)L'invention concerne une couche mince de semi-conducteur à oxyde, un transistor à couches minces, un procédé de préparation et un dispositif, qui se rapportent au domaine des panneaux d'affichage. Le constituant de la couche mince de semi-conducteur à oxyde est un oxyde comprenant du zirconium et de l'indium. Le procédé de préparation de la couche mince de semi-conducteur à oxyde consiste à : préparer l'oxyde comprenant du zirconium et de l'indium en un matériau cible ; et traiter le matériau cible par pulvérisation pour obtenir la couche mince de semi-conducteur à oxyde.
(ZH)一种氧化物半导体薄膜、薄膜晶体管、制备方法及装置,属于平板显示领域。所述氧化物半导体薄膜的成分为包含锆和铟的氧化物。所述氧化物半导体薄膜的制备方法包括:将包含锆和铟的氧化物制备成靶材;对所述靶材进行溅射处理得到氧化物半导体薄膜。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG).
Publication Language: Chinese (ZH)
Filing Language: Chinese (ZH)