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1. WO2016154339 - CONDUCTIVE THROUGH-POLYMER VIAS FOR CAPACITIVE STRUCTURES

Publication Number WO/2016/154339
Publication Date 29.09.2016
International Application No. PCT/US2016/023817
International Filing Date 23.03.2016
IPC
H01L 51/00 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
H01G 9/04 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
9Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
004Details
04Electrodes
H01L 29/94 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
86controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated, or switched
92Capacitors with potential-jump barrier or surface barrier
94Metal-insulator-semiconductors, e.g. MOS
B82Y 40/00 2011.01
BPERFORMING OPERATIONS; TRANSPORTING
82NANOTECHNOLOGY
YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE  OR TREATMENT OF NANOSTRUCTURES
40Manufacture or treatment of nanostructures
CPC
H01L 21/288
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
283Deposition of conductive or insulating materials for electrodes ; conducting electric current
288from a liquid, e.g. electrolytic deposition
H01L 21/31051
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques
3105After-treatment
31051Planarisation of the insulating layers
H01L 21/76805
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
71Manufacture of specific parts of devices defined in group H01L21/70
768Applying interconnections to be used for carrying current between separate components within a device ; comprising conductors and dielectrics
76801characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
76802by forming openings in dielectrics
76805the opening being a via or contact hole penetrating the underlying conductor
H01L 21/76831
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
71Manufacture of specific parts of devices defined in group H01L21/70
768Applying interconnections to be used for carrying current between separate components within a device ; comprising conductors and dielectrics
76801characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
76829characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
76831in via holes or trenches, e.g. non-conductive sidewall liners
H01L 21/76874
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
71Manufacture of specific parts of devices defined in group H01L21/70
768Applying interconnections to be used for carrying current between separate components within a device ; comprising conductors and dielectrics
76838characterised by the formation and the after-treatment of the conductors
76841Barrier, adhesion or liner layers
76871Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers
76874for electroless plating
H01L 21/76877
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
71Manufacture of specific parts of devices defined in group H01L21/70
768Applying interconnections to be used for carrying current between separate components within a device ; comprising conductors and dielectrics
76838characterised by the formation and the after-treatment of the conductors
76877Filling of holes, grooves or trenches, e.g. vias, with conductive material
Applicants
  • TEXAS INSTRUMENTS INCORPORATED [US]/[US]
  • TEXAS INSTRUMENTS JAPAN LIMITED [JP]/[JP] (JP)
Inventors
  • ROMIG, Matthew, D.
  • STEPNIAK, Frank
  • GANDHI, Saumya
Agents
  • DAVIS, Jr., Michael A.
Priority Data
14/668,08525.03.2015US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) CONDUCTIVE THROUGH-POLYMER VIAS FOR CAPACITIVE STRUCTURES
(FR) POLYMÈRE CONDUCTEURS À TROUS D'INTERCONNEXION POUR STRUCTURES CAPACITIVES
Abstract
(EN)
In described examples, an electronic system includes an electronic body (301) with terminal pads (310) and at least one capacitor embedded in the electronic body. The capacitor includes: an insulating and adhesive first polymeric film (302) covering the body surface except the terminal pads; a sheet (320) of high-density capacitive elements, the first capacitor terminal being a metal foil (321) attached to the first polymeric film (302), the second terminal being a conductive polymeric compound (324), and the insulator being a dielectric skin (323). Sheet (320) has sets of via-holes, including: a first set of holes reaching the metal foil (321), a second set of holes reaching the terminals (310), and a third set of holes reaching the conductive polymeric compound (324). An insulating second polymeric film (303) lines the sidewalls of the holes and planarizes the sheet surface. Metal fills the via-holes between the polymeric sidewalls and forms conductive traces and attachment pads on the system surface.
(FR)
Dans les exemples décrits, un système électronique comprend un corps électronique (301) avec des pastilles d'extrémité (310) et au moins un condensateur incorporé dans le corps électronique. Le condensateur comprend: un premier film polymère adhésif et isolant (302) recouvrant la surface du corps à l'exception des pastilles d'extrémité; une feuille (320) d'éléments capacitifs de haute densité, la première borne de condensateurs étant une feuille métallique (321) fixée au premier film polymère (302), le second terminal étant un composé polymère conducteur (324), et l'isolant étant une peau diélectrique (323). La feuille (320) comporte des ensembles de trous traversants, comprenant: un premier ensemble de trous atteignant la feuille métallique (321), un second ensemble de trous atteignant les bornes (310), et un troisième ensemble de trous atteignant le composé polymère conducteur (324). Un deuxième film polymère isolant (303) longe les parois latérales des trous et planarise la surface de la feuille. Le métal remplit les trous traversants entre les parois latérales en polymère et il forme des traces conductrices et des plages de fixation sur la surface du système.
Also published as
Latest bibliographic data on file with the International Bureau