Processing

Please wait...

Settings

Settings

Goto Application

1. WO2016153755 - SILICON BASED CHARGE NEUTRALIZATION SYSTEMS

Publication Number WO/2016/153755
Publication Date 29.09.2016
International Application No. PCT/US2016/020552
International Filing Date 03.03.2016
IPC
H01T 19/00 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
TSPARK GAPS; OVERVOLTAGE ARRESTERS USING SPARK GAPS; SPARKING PLUGS; CORONA DEVICES; GENERATING IONS TO BE INTRODUCED INTO NON-ENCLOSED GASES
19Devices providing for corona discharge
H01T 23/00 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
TSPARK GAPS; OVERVOLTAGE ARRESTERS USING SPARK GAPS; SPARKING PLUGS; CORONA DEVICES; GENERATING IONS TO BE INTRODUCED INTO NON-ENCLOSED GASES
23Apparatus for generating ions to be introduced into non-enclosed gases, e.g. into the atmosphere
CPC
H01T 19/00
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
TSPARK GAPS; OVERVOLTAGE ARRESTERS USING SPARK GAPS; SPARKING PLUGS; CORONA DEVICES; GENERATING IONS TO BE INTRODUCED INTO NON-ENCLOSED GASES
19Devices providing for corona discharge
H01T 23/00
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
TSPARK GAPS; OVERVOLTAGE ARRESTERS USING SPARK GAPS; SPARKING PLUGS; CORONA DEVICES; GENERATING IONS TO BE INTRODUCED INTO NON-ENCLOSED GASES
23Apparatus for generating ions to be introduced into non-enclosed gases, e.g. into the atmosphere
Applicants
  • ILLINOIS TOOL WORKS INC. [US]/[US]
Inventors
  • GEFTER, Peter
  • KLOCHKOV, Aleksey
Agents
  • PAHNKE, Chad A.
Priority Data
14/665,99423.03.2015US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) SILICON BASED CHARGE NEUTRALIZATION SYSTEMS
(FR) SYSTÈMES DE NEUTRALISATION DE CHARGE À BASE DE SILICIUM
Abstract
(EN)
An embodiment of the invention provides a method for low emission charge neutralization, comprising: generating a high frequency alternating current (AC) voltage; transmitting the high frequency AC voltage to at least one non-metallic emitter (300a); wherein the at least one non-metallic emitter comprises at least 70% silicon by weight and less than 99.99% silicon by weight; wherein the at least one emitter comprises at least one treated surface section (310a) with a destroyed oxidation layer; and generating ions from the at least one non-metallic emitter in response to the high frequency AC voltage. Another embodiment of the invention provides an apparatus for low emission charge neutralization wherein the apparatus can perform the above-described operations.
(FR)
Un mode de réalisation de l'invention concerne un procédé de neutralisation de charge à faible émission, comprenant la génération d'une tension à courant alternatif (CA) à haute fréquence ; la transmission de la tension CA à haute fréquence à au moins un émetteur non métallique (300a). L'au moins un émetteur non métallique comprend au moins 70 % massiques de silicium et moins de 99,99 % massiques de silicium. L'au moins un émetteur comprend au moins une section de surface traitée (310a) avec une couche d'oxydation détruite. Le procédé selon l'invention comprend en outre la génération d'ions depuis l'au moins un émetteur non métallique en réponse à la tension CA à haute fréquence. Un autre mode de réalisation de l'invention concerne un appareil de neutralisation de charge à faible émission qui peut effectuer les opérations décrites ci-dessus.
Latest bibliographic data on file with the International Bureau