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1. WO2016153634 - CHALCOGENIDE GLASS COMPOSITION AND CHALCOGENIDE SWITCH DEVICES

Publication Number WO/2016/153634
Publication Date 29.09.2016
International Application No. PCT/US2016/018130
International Filing Date 16.02.2016
IPC
C03C 3/32 2006.01
CCHEMISTRY; METALLURGY
03GLASS; MINERAL OR SLAG WOOL
CCHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
3Glass compositions
32Non-oxide glass compositions, e.g. binary or ternary halides, sulfides, or nitrides of germanium, selenium or tellurium
G11C 7/00 2006.01
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
7Arrangements for writing information into, or reading information out from, a digital store
CPC
C03C 3/00
CCHEMISTRY; METALLURGY
03GLASS; MINERAL OR SLAG WOOL
CCHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
3Glass compositions
C03C 3/04
CCHEMISTRY; METALLURGY
03GLASS; MINERAL OR SLAG WOOL
CCHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
3Glass compositions
04containing silica
C03C 3/062
CCHEMISTRY; METALLURGY
03GLASS; MINERAL OR SLAG WOOL
CCHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
3Glass compositions
04containing silica
062with less than 40% silica by weight
C03C 3/32
CCHEMISTRY; METALLURGY
03GLASS; MINERAL OR SLAG WOOL
CCHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
3Glass compositions
32Non-oxide glass compositions, e.g. binary or ternary halides, sulfides or nitrides of germanium, selenium or tellurium
C03C 3/321
CCHEMISTRY; METALLURGY
03GLASS; MINERAL OR SLAG WOOL
CCHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
3Glass compositions
32Non-oxide glass compositions, e.g. binary or ternary halides, sulfides or nitrides of germanium, selenium or tellurium
321Chalcogenide glasses, e.g. containing S, Se, Te
H01L 27/2409
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
24including solid state components for rectifying, amplifying or switching without a potential-jump barrier or surface barrier, ; e.g. resistance switching non-volatile memory structures
2409comprising two-terminal selection components, e.g. diodes
Applicants
  • INTEL CORPORATION [US]/[US]
Inventors
  • CHANG, Kuo-wei
  • FANTINI, Paolo
Agents
  • AUYEUNG, Al
Priority Data
14/664,74520.03.2015US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) CHALCOGENIDE GLASS COMPOSITION AND CHALCOGENIDE SWITCH DEVICES
(FR) COMPOSITION DE VERRES DE CHALCOGÉNURE ET DISPOSITIFS DE COMMUTATION À BASE DE CHALCOGÉNURES
Abstract
(EN)
Embodiments of the present disclosure describe chalcogenide glass compositions and chalcogenide switch devices (CSD.) The compositions generally may include 3% to 15%, silicon, 8% to 16% germanium in, greater than 45% selenium, and 20% to 35% arsenic, by weight. The amount of silicon and germanium in a composition generally may include more than 10% by weight. CSDs may include various compositions of chalcogenide glass, and a plurality of them may be used in a memory device, such as die with a memory component, and may be used in various electronic components and systems. Other embodiments may be described and/or claimed.
(FR)
Des modes de réalisation de la présente invention concernent des compositions de verres de chalcogénure et des dispositifs de commutation à base de chalcogénures (CSD ) De manière générale, les compositions peuvent comprendre 3 % à 15 % de silicium, de 8 % à 16 % de germanium, plus de 45 % de sélénium et de 20 % à 35 % d'arsenic, en poids. La quantité de silicium et de germanium dans une composition peut généralement représenter plus de 10 % en poids. Les CSD peuvent comprendre diverses compositions de verres de chalcogénure, et une pluralité de celles-ci peut être utilisée dans un dispositif de mémoire, comme une matrice avec un composant de mémoire, et peut être utilisée dans divers composants et systèmes électroniques. D'autres modes de réalisation peuvent faire l'objet d'une description et/ou de revendications.
Also published as
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