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1. WO2016152059 - SEMICONDUCTOR DEVICE

Publication Number WO/2016/152059
Publication Date 29.09.2016
International Application No. PCT/JP2016/001322
International Filing Date 10.03.2016
IPC
H01L 29/78 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76Unipolar devices
772Field-effect transistors
78with field effect produced by an insulated gate
H01L 29/06 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
02Semiconductor bodies
06characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H01L 29/12 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
02Semiconductor bodies
12characterised by the materials of which they are formed
CPC
H01L 29/06
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
02Semiconductor bodies ; ; Multistep manufacturing processes therefor
06characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; ; characterised by the concentration or distribution of impurities within semiconductor regions
H01L 29/0623
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
02Semiconductor bodies ; ; Multistep manufacturing processes therefor
06characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; ; characterised by the concentration or distribution of impurities within semiconductor regions
0603characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
0607for preventing surface leakage or controlling electric field concentration
0611for increasing or controlling the breakdown voltage of reverse biased devices
0615by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
0619with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
0623Buried supplementary region, e.g. buried guard ring
H01L 29/0856
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
02Semiconductor bodies ; ; Multistep manufacturing processes therefor
06characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; ; characterised by the concentration or distribution of impurities within semiconductor regions
08with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
0843Source or drain regions of field-effect devices
0847of field-effect transistors with insulated gate
0852of DMOS transistors
0856Source regions
H01L 29/105
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
02Semiconductor bodies ; ; Multistep manufacturing processes therefor
06characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; ; characterised by the concentration or distribution of impurities within semiconductor regions
10with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
1025Channel region of field-effect devices
1029of field-effect transistors
1033with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
105with vertical doping variation
H01L 29/1095
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
02Semiconductor bodies ; ; Multistep manufacturing processes therefor
06characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; ; characterised by the concentration or distribution of impurities within semiconductor regions
10with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
1095Body region, i.e. base region, of DMOS transistors or IGBTs
H01L 29/12
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
02Semiconductor bodies ; ; Multistep manufacturing processes therefor
12characterised by the materials of which they are formed
Applicants
  • 株式会社デンソー DENSO CORPORATION [JP]/[JP]
  • トヨタ自動車株式会社 TOYOTA JIDOSHA KABUSHIKI KAISHA [JP]/[JP]
Inventors
  • 三村 智博 MIMURA, Tomohiro
  • 金村 高司 KANEMURA, Takashi
  • 杉本 雅裕 SUGIMOTO, Masahiro
  • 副島 成雅 SOEJIMA, Narumasa
Agents
  • 金 順姫 KIN, Junhi
Priority Data
2015-06139424.03.2015JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) SEMICONDUCTOR DEVICE
(FR) DISPOSITIF À SEMI-CONDUCTEURS
(JA) 半導体装置
Abstract
(EN)
A semiconductor device that is provided with: a drain region (1); a drift layer (2) that is configured from a first conductive-type semiconductor that has a lower concentration of impurities than the drain region; a base region (4) that is configured from a second conductive-type semiconductor; a source region (5) that is configured from a high concentration of the first conductive-type semiconductor; a contact region (6) that is configured from a high concentration of the second conductive-type semiconductor; a trench-gate structure that has a first gate insulating film (8a) and a first gate electrode (9a) that are arranged on an inlet side of a trench (7) and go deeper than the base region and that also includes a bottom-part insulating film (8b); a source electrode (10) that is electrically connected to the source region and the contact region; and a drain electrode (12) that is arranged on an undersurface side of the drain region. The trench is arranged so as to go deeper than the base region. The first gate insulating film is configured from an insulating material that has a higher dielectric constant than the bottom-part insulating film.
(FR)
L'invention concerne un dispositif à semi-conducteurs qui est pourvu de : une région de drain (1) ; une couche de dérive (2) qui est configurée à partir d'un semi-conducteur d'un premier type de conduction qui a une plus faible concentration d'impuretés que la région de drain ; une région de base (4) qui est configurée à partir d'un semi-conducteur d'un second type de conduction ; une zone de source (5) qui est configurée à partir d'une concentration élevée du semi-conducteur d'un premier type de conduction ; une zone de contact (6) qui est configurée à partir d'une concentration élevée du semi-conducteur d'un second type de conduction ; une structure à grille en tranchée qui a un premier film d'isolation de grille (8a) et une première électrode de grille (9a) qui sont agencés sur un côté d'entrée d'une tranchée (7) et s'enfoncent plus profondément que la région de base et qui comprend également un film d'isolation de partie inférieure (8b) ; une électrode de source (10) qui est connectée électriquement à la région source et la région de contact ; et une électrode de drain (12) qui est disposée sur un côté de surface inférieure de la région de drain. La tranchée est agencée de manière à s'enfoncer plus profondément que la région de base. Le premier film d'isolation de grille est configuré à partir d'un matériau isolant qui a une constante diélectrique plus élevée que le film d'isolation de partie inférieure.
(JA)
 半導体装置は、ドレイン領域(1)と、前記ドレイン領域よりも低不純物濃度の第1導電型半導体で構成されたドリフト層(2)と、第2導電型半導体で構成されたベース領域(4)と、高濃度の第1導電型半導体で構成されたソース領域(5)と、高濃度とされた第2導電型半導体で構成されたコンタクト領域(6)と、トレンチ(7)の入口側に配置され、前記ベース領域よりも深くまで配置された第1ゲート絶縁膜(8a)と第1ゲート電極(9a)とを有すると共に、底部絶縁膜(8b)を含むトレンチゲート構造と、前記ソース領域および前記コンタクト領域に電気的に接続されたソース電極(10)と、前記ドレイン領域の裏面側に配置されたドレイン電極(12)と、を備える。前記トレンチは、前記ベース領域よりも深くまで配置される。また、前記第1ゲート絶縁膜は、前記底部絶縁膜よりも高い誘電率の絶縁材料で構成されている。
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