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1. WO2016151001 - METHOD OF REDUCTION OF DEFECTS AND METHOD OF FABRICATION OF SOI STRUCTURES COMPRISING SUCH METHOD

Publication Number WO/2016/151001
Publication Date 29.09.2016
International Application No. PCT/EP2016/056346
International Filing Date 23.03.2016
IPC
C30B 29/06 2006.01
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
29Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
02Elements
06Silicon
C30B 33/02 2006.01
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
33After-treatment of single crystals or homogeneous polycrystalline material with defined structure
02Heat treatment
CPC
C30B 29/06
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
29Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
02Elements
06Silicon
C30B 33/02
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
33After-treatment of single crystals or homogeneous polycrystalline material with defined structure
02Heat treatment
Applicants
  • SOITEC [FR]/[FR]
Inventors
  • KONONCHUK, Oleg
  • MAK, Aurélien
Agents
  • GRÜNECKER PATENT- UND RECHTSANWÄLTE PARTG MBB
Priority Data
150058524.03.2015FR
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) METHOD OF REDUCTION OF DEFECTS AND METHOD OF FABRICATION OF SOI STRUCTURES COMPRISING SUCH METHOD
(FR) PROCÉDÉ DE RÉDUCTION DE DÉFAUTS ET PROCÉDÉ DE FABRICATION DE STRUCTURES DE SILICIUM-SUR-ISOLANT COMPRENANT UN TEL PROCÉDÉ
Abstract
(EN)
The present invention relates to a method of reduction of defects for substrates comprising silicon, in particular formed by Czochralski process, comprising a first thermal treatment in a substantially non-oxidizing atmosphere and a second thermal treatment in an oxidizing atmosphere., and to a method of fabrication of a silicon-on-insulator substrate obtained by layer transfer technique further comprising said method of reduction of defects.
(FR)
La présente invention concerne un procédé de réduction de défauts pour des substrats contenant du silicium, en particulier formés par procédé de Czochralski, comprenant un premier traitement thermique dans une atmosphère pratiquement non oxydante et un deuxième traitement thermique dans une atmosphère oxydante, et un procédé de fabrication d'un substrat silicium-sur-isolant obtenu par une technique de transfert de couches, comprenant en outre ledit procédé de réduction de défauts.
Latest bibliographic data on file with the International Bureau