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1. WO2016150841 - OPTOELECTRONIC COMPONENT AND METHOD FOR PRODUCING SAME

Publication Number WO/2016/150841
Publication Date 29.09.2016
International Application No. PCT/EP2016/055938
International Filing Date 18.03.2016
IPC
H01L 25/16 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25Assemblies consisting of a plurality of individual semiconductor or other solid state devices
16the devices being of types provided for in two or more different main groups of groups H01L27/-H01L51/139
H01L 33/62 2010.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48characterised by the semiconductor body packages
62Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
H01L 23/538 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
52Arrangements for conducting electric current within the device in operation from one component to another
538the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
CPC
H01L 2224/48091
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
42Wire connectors; Manufacturing methods related thereto
47Structure, shape, material or disposition of the wire connectors after the connecting process
48of an individual wire connector
4805Shape
4809Loop shape
48091Arched
H01L 2224/48471
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
42Wire connectors; Manufacturing methods related thereto
47Structure, shape, material or disposition of the wire connectors after the connecting process
48of an individual wire connector
484Connecting portions
4847the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
48471the other connecting portion not on the bonding area being a ball bond, i.e. wedge-to-ball, reverse stitch
H01L 25/042
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; ; Multistep manufacturing processes thereof
03all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L51/00, e.g. assemblies of rectifier diodes
04the devices not having separate containers
041the devices being of a type provided for in group H01L31/00
042the devices being arranged next to each other
H01L 25/167
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; ; Multistep manufacturing processes thereof
16the devices being of types provided for in two or more different main groups of H01L27/00 - H01L49/00 ; and H01L51/00; , e.g. forming hybrid circuits
167comprising optoelectronic devices, e.g. LED, photodiodes
H01L 2933/0066
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2933Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
0008Processes
0033relating to semiconductor body packages
0066relating to arrangements for conducting electric current to or from the semiconductor body
H01L 31/0203
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
02Details
0203Containers; Encapsulations ; , e.g. encapsulation of photodiodes
Applicants
  • OSRAM OPTO SEMICONDUCTORS GMBH [DE]/[DE]
Inventors
  • RICHTER, Daniel
  • KIESSLING, Matthias
Agents
  • PATENTANWALTSKANZLEI WILHELM & BECK
Priority Data
10 2015 104 185.520.03.2015DE
Publication Language German (DE)
Filing Language German (DE)
Designated States
Title
(DE) OPTOELEKTRONISCHES BAUELEMENT UND VERFAHREN ZU SEINER HERSTELLUNG
(EN) OPTOELECTRONIC COMPONENT AND METHOD FOR PRODUCING SAME
(FR) COMPOSANT OPTOÉLECTRONIQUE ET PROCÉDÉ DE FABRICATION ASSOCIÉ
Abstract
(DE)
Ein optoelektronisches Bauelement umfasst einen oberen Gehäuseteil und einen unteren Gehäuseteil. Der obere Gehäuseteil ist über dem unteren Gehäuseteil angeordnet. Der obere Gehäuseteil weist einen optoelektronischen Halbleiterchip auf. Zwischen dem oberen Gehäuseteil und dem unteren Gehäuseteil ist eine mittlere Metallisierungsebene angeordnet. An einer von dem oberen Gehäuseteil abgewandten Unterseite des unteren Gehäuseteils ist eine untere Metallisierungsebene angeordnet. Der untere Gehäuseteil weist einen unteren Durchkontakt auf, der sich von dermittleren Metallisierungsebene durch den unteren Gehäuseteil zu der unteren Metallisierungsebene erstreckt.
(EN)
The invention relates to an optoelectronic component comprising an upper housing part and a lower housing part. The upper housing part is arranged over the lower housing part and has an optoelectronic semiconductor chip. A central metallization plane is arranged between the upper housing part and the lower housing part, and a lower metallization plane is arranged on a lower housing part lower face facing away from the upper housing part. The lower housing part has a lower via which extends through the lower housing part from the central metallization plane to the lower metallization plane.
(FR)
L'invention concerne un composant optoélectronique qui comprend une partie de boîtier supérieure et une partie de boîtier inférieure. La partie de boîtier supérieure est disposée au-dessus de la partie de boîtier inférieure. La partie de boîtier supérieure comprend une puce semi-conductrice optoélectronique. Entre la partie de boîtier supérieure et la partie de boîtier inférieure est disposé un plan médian de métallisation. Sur une face inférieure, de la partie de boîtier inférieure, à l’opposé de la partie de boîtier supérieure est disposé un plan inférieur de métallisation. La partie de boîtier inférieure comprend un contact traversant inférieur qui s’étend du plan médian de métallisation jusqu’au plan inférieur de métallisation en passant à travers la partie de boîtier inférieure.
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