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1. WO2016150114 - ARRAY SUBSTRATE, MANUFACTURING METHOD FOR ARRAY SUBSTRATE, AND DISPLAY DEVICE

Publication Number WO/2016/150114
Publication Date 29.09.2016
International Application No. PCT/CN2015/089445
International Filing Date 11.09.2015
IPC
H01L 27/12 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
12the substrate being other than a semiconductor body, e.g. an insulating body
H01L 21/77 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
H01L 21/66 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
66Testing or measuring during manufacture or treatment
CPC
H01L 22/14
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
22Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
10Measuring as part of the manufacturing process
14for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
H01L 22/32
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
22Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
30Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
32Additional lead-in metallisation on a device or substrate, e.g. additional pads or pad portions, lines in the scribe line, sacrificed conductors
H01L 27/1244
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
12the substrate being other than a semiconductor body, e.g. an insulating body
1214comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
124with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
1244for preventing breakage, peeling or short circuiting
H01L 27/1259
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
12the substrate being other than a semiconductor body, e.g. an insulating body
1214comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
1259Multistep manufacturing methods
Applicants
  • 京东方科技集团股份有限公司 BOE TECHNOLOGY GROUP CO., LTD. [CN]/[CN]
  • 成都京东方光电科技有限公司 CHENGDU BOE OPTOELECTRONICS TECHNOLOGY CO., LTD. [CN]/[CN]
Inventors
  • 樊浩原 FAN, Haoyuan
  • 辛燕霞 XIN, Yanxia
  • 杨玉清 YANG, Yuqing
Agents
  • 北京银龙知识产权代理有限公司 DRAGON INTELLECTUAL PROPERTY LAW FIRM
Priority Data
201510125812.320.03.2015CN
Publication Language Chinese (ZH)
Filing Language Chinese (ZH)
Designated States
Title
(EN) ARRAY SUBSTRATE, MANUFACTURING METHOD FOR ARRAY SUBSTRATE, AND DISPLAY DEVICE
(FR) SUBSTRAT DE MATRICE, PROCÉDÉ DE FABRICATION DE SUBSTRAT DE MATRICE, ET DISPOSITIF D'AFFICHAGE
(ZH) 阵列基板、阵列基板的制造方法和显示装置
Abstract
(EN)
An array substrate, a manufacturing method for an array substrate, and a display device. The array substrate comprises: a working circuit interface (101), a test interface (102) and a test line (103) connecting the working circuit interface (101) to the test interface (102). At least one break point (A) is contained on the test line (103), and conductive contacts (105) running through an upper surface of the array substrate are provided at two ends of each break point (A) on the test line (103); and when a working circuit is tested, the test line can be turned on by turning on the conductive contacts (105) at both ends of all of the break points (A).
(FR)
La présente invention concerne un substrat de matrice, un procédé de fabrication de substrat de matrice, et un dispositif d'affichage. Le substrat de matrice comprend : une interface de circuit de travail (101), une interface de test (102), et une ligne de test (103) connectant l'interface de circuit de travail (101) à l'interface de test (102). Au moins un point de rupture (A) est contenu sur la ligne de test (103), et des contacts conducteurs (105) passant à travers une surface supérieure du substrat de matrice sont disposés au niveau de deux extrémités de chaque point de rupture (A) sur la ligne de test (103) ; et lorsqu'un circuit de travail est testé, la ligne de test peut être activée par mise sous tension des contacts conducteurs (105) situés aux deux extrémités de tous les points de rupture (A).
(ZH)
一种阵列基板、阵列基板的制造方法和显示装置。该阵列基板包括:工作电路接口(101)、测试接口(102)以及连接工作电路接口(101)和测试接口(102)的测试线路(103);测试线路(103)上包含至少一个断开点(A),测试线路(103)上每个断开点(A)的两端都设置有贯通到阵列基板上表面的导电接点(105);在对工作电路进行测试时,通过导通所有断开点(A)的两端的导电接点(105)能够实现测试线路的导通。
Also published as
Latest bibliographic data on file with the International Bureau