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1. WO2016149696 - SILICON-CONTAINING SEMICONDUCTOR STRUCTURES, METHODS OF MAKING THE SAME AND DEVICES INCLUDING THE SAME

Publication Number WO/2016/149696
Publication Date 22.09.2016
International Application No. PCT/US2016/023370
International Filing Date 21.03.2016
IPC
H01L 31/0216 2014.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02Details
0216Coatings
H01L 21/31 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
H01L 21/469 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
34the devices having semiconductor bodies not provided for in groups H01L21/06, H01L21/16, and H01L21/18159
46Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/36-H01L21/428142
461to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
469to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers
CPC
H01L 21/0203
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02002Preparing wafers
02005Preparing bulk and homogeneous wafers
0203Making porous regions on the surface
H01L 21/30604
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
302to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
306Chemical or electrical treatment, e.g. electrolytic etching
30604Chemical etching
H01L 31/02167
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
02Details
0216Coatings
02161for devices characterised by at least one potential jump barrier or surface barrier
02167for solar cells
H01L 31/02168
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
02Details
0216Coatings
02161for devices characterised by at least one potential jump barrier or surface barrier
02167for solar cells
02168the coatings being antireflective or having enhancing optical properties for the solar cells
H01L 31/028
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
0248characterised by their semiconductor bodies
0256characterised by the material
0264Inorganic materials
028including, apart from doping material or other impurities, only elements of Group IV of the Periodic System
H01L 31/1804
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
18Processes or apparatus peculiar to the manufacture or treatment of these devices or of parts thereof
1804comprising only elements of Group IV of the Periodic System
Applicants
  • SPECMAT, INC. [US]/[US]
Inventors
  • FAUR, Horia M.
  • FAUR, Maria
  • KNIGHT, Gregory
  • MENDIRATTA, Arjun
Agents
  • CRIMALDI, Joseph J.
Priority Data
62/135,40619.03.2015US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) SILICON-CONTAINING SEMICONDUCTOR STRUCTURES, METHODS OF MAKING THE SAME AND DEVICES INCLUDING THE SAME
(FR) STRUCTURES À SEMI-CONDUCTEURS CONTENANT DU SILICIUM, PROCÉDÉS DE FABRICATION ASSOCIÉS ET DISPOSITIFS COMPRENANT CEUX-CI
Abstract
(EN)
A semiconductor system includes a silicon substrate and a porous silicon region disposed on the silicon substrate. The porous region is configured to passivate the surface of the silicon substrate via a field effect and to reduce reflection loss on the silicon substrate via an appropriate refractive index. The porous silicon region is manufactured by a strain etching process, which retrofits existing tools for junction isolation and Phosphorous Silicon Glass (PSG) etch in solar cell manufacturing. The retorfitted tools for junction isolation and PSG etch achieves multiple purposes in a single step, including etch-back, PSG etc, antireflection coating, and passivation of the front surface of the solar cell.
(FR)
L'invention concerne un système à semi-conducteurs comprenant un substrat de silicium et une région de silicium poreuse disposée sur le substrat de silicium. La région poreuse est configurée pour passiver la surface du substrat de silicium par le biais d'un effet de champ et pour réduire la perte par réflexion sur le substrat de silicium par le biais d'un indice de réfraction approprié. La région de silicium poreuse est fabriquée par un procédé de gravure de contrainte qui permet d'équiper rétroactivement des outils existants pour un isolement par jonction et une gravure de verre de silicium de phosphore (PSG) dans la fabrication de cellules solaires. Les outils équipés de manière rétroactive pour l'isolement par jonction et la gravure PSG permettent d'atteindre de multiples objectifs en une seule étape, dont une gravure en retrait, PSG etc., un revêtement antireflet et une passivation de la surface avant de la cellule solaire.
Also published as
Latest bibliographic data on file with the International Bureau