Processing

Please wait...

PATENTSCOPE will be unavailable a few hours for maintenance reason on Saturday 31.10.2020 at 7:00 AM CET
Settings

Settings

Goto Application

1. WO2016147504 - LIGHT DETECTION DEVICE

Publication Number WO/2016/147504
Publication Date 22.09.2016
International Application No. PCT/JP2015/084916
International Filing Date 14.12.2015
IPC
H01L 27/146 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
G01J 1/02 2006.01
GPHYSICS
01MEASURING; TESTING
JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED, VISIBLE OR ULTRA-VIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
1Photometry, e.g. photographic exposure meter
02Details
H01L 27/144 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
H01L 31/10 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
08in which radiation controls flow of current through the device, e.g. photoresistors
10characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
H01L 31/107 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
08in which radiation controls flow of current through the device, e.g. photoresistors
10characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
101Devices sensitive to infra-red, visible or ultra-violet radiation
102characterised by only one potential barrier or surface barrier
107the potential barrier working in avalanche mode, e.g. avalanche photodiode
H04N 5/369 2011.01
HELECTRICITY
04ELECTRIC COMMUNICATION TECHNIQUE
NPICTORIAL COMMUNICATION, e.g. TELEVISION
5Details of television systems
30Transforming light or analogous information into electric information
335using solid-state image sensors
369SSIS architecture; Circuitry associated therewith
CPC
G01J 1/02
GPHYSICS
01MEASURING; TESTING
JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED, VISIBLE OR ULTRA-VIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
1Photometry, e.g. photographic exposure meter
02Details
G01J 1/44
GPHYSICS
01MEASURING; TESTING
JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED, VISIBLE OR ULTRA-VIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
1Photometry, e.g. photographic exposure meter
42using electric radiation detectors
44Electric circuits
G01J 2001/4466
GPHYSICS
01MEASURING; TESTING
JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED, VISIBLE OR ULTRA-VIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
1Photometry, e.g. photographic exposure meter
42using electric radiation detectors
44Electric circuits
4446Type of detector
446Photodiode
4466Avalanche
G01J 2001/448
GPHYSICS
01MEASURING; TESTING
JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED, VISIBLE OR ULTRA-VIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
1Photometry, e.g. photographic exposure meter
42using electric radiation detectors
44Electric circuits
4446Type of detector
448Array [CCD]
H01L 2224/05554
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
02Bonding areas; Manufacturing methods related thereto
04Structure, shape, material or disposition of the bonding areas prior to the connecting process
05of an individual bonding area
0554External layer
0555Shape
05552in top view
05554being square
H01L 2224/32227
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
31Structure, shape, material or disposition of the layer connectors after the connecting process
32of an individual layer connector
321Disposition
32151the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
32221the body and the item being stacked
32225the item being non-metallic, e.g. insulating substrate with or without metallisation
32227the layer connector connecting to a bond pad of the item
Applicants
  • 浜松ホトニクス株式会社 HAMAMATSU PHOTONICS K.K. [JP]/[JP]
Inventors
  • 鎌倉 正吾 KAMAKURA Shogo
  • 山田 隆太 YAMADA Ryuta
  • 里 健一 SATO Kenichi
Agents
  • 長谷川 芳樹 HASEGAWA Yoshiki
Priority Data
2015-05462318.03.2015JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) LIGHT DETECTION DEVICE
(FR) DISPOSITIF DE DÉTECTION DE LUMIÈRE
(JA) 光検出装置
Abstract
(EN)
A semiconductor substrate 1N, having a first region RS1 in which a plurality of pixels are disposed, and a second region RS2 located on the inside of the first region RS1 so as to be surrounded by the first region RS1 when viewed from the direction in which a main surface 1Na and a main surface 1Nb face each other. A through-hole TH penetrating the semiconductor substrate 1N is formed in the second region RS2 of the semiconductor substrate 1N. An electrode E3 disposed on the main surface 1Na-side of the semiconductor substrate 1N and electrically connected to the plurality of pixels, and an electrode E5 disposed on the main surface 20a-side of a mounting substrate 20 are connected through a bonding wire W1 inserted through the through-hole TH.
(FR)
Un substrat semi-conducteur 1N, ayant une première région RS1 dans laquelle sont disposés une pluralité de pixels, et une seconde région RS2 située à l'intérieur de la première région RS1 de façon à être entourée par la première région RS1 lorsque l'on regarde depuis la direction dans laquelle une surface principale 1Na et une surface principale 1Nb se font face l'une l'autre. Un trou traversant TH pénétrant dans le substrat semi-conducteur 1N est formé dans la seconde région RS2 du substrat semi-conducteur 1N. Une électrode E3 disposée sur le côté surface principale 1Na du substrat semi-conducteur 1N et connectée électriquement à la pluralité de pixels, et une électrode E5 disposée sur le côté surface principale 20a d'un substrat de montage 20 sont connectées par l'intermédiaire d'un fil de connexion W1 inséré à travers le trou traversant TH.
(JA)
 半導体基板1Nは、複数の画素が配置されている第一領域RS1と、主面1Naと主面1Nbとが対向している方向から見て、第一領域RS1に囲まれるように第一領域RS1の内側に位置している第二領域RS2と、を有している。半導体基板1Nの第二領域RS2には、半導体基板1Nを貫通する貫通孔THが形成されている。半導体基板1Nの主面1Na側に配置されていると共に複数の画素と電気的に接続されている電極E3と、搭載基板20の主面20a側に配置されている電極E5とは、貫通孔THに挿通されているボンディングワイヤW1を介して接続されている。
Also published as
Latest bibliographic data on file with the International Bureau