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1. WO2016144869 - OPTOELECTRONIC DEVICE AND METHOD OF MAKING THE SAME

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[ EN ]

What is claimed is;

1. An optoelectronic device (10), comprising:

a first substrate (12) having a first surface (14) and a second surface (16); an optoelectronic coating (17) over the second surface (16), comprising: an underiayer (18) located over the second surface (18);

a first conductive layer (20) over the underiayer (18);

an overiayer (22) over the first conductive layer (20);

a semiconductor layer (24) over the first conductive layer (20); and a second conductive layer (28) over the semiconductor layer (24), wherein (i) the first conductive layer (20) comprises a conductive oxide and at least one dopant selected from the group consisting of tungsten, molybdenum, niobium, and fluorine, and/or (ii) the overiayer (22) comprises a buffer layer (42) comprising tin oxide and at ieast one material selected from the group consisting of zinc, indium, gallium, and magnesium.

The optoelectronic device (10) of claim 1 , wherein the underiayer (18) comprises a sodium barrier layer (38) comprising silicon oxide, and/or the underiayer (18) comprises a bottom optical layer (38) comprising at Ieast one oxide of tin, zinc, silicon, aluminum, titanium, and/or mixtures thereof.

3. The optoelectronic device (10) of claims 1 or 2, wherein the first conductive layer (20) comprises a first layer comprising tin oxide and tungsten and/or the first conductive layer (20) comprises a second layer comprising tin oxide and fluorine.

4. The optoelectronic device (10) of any of claims 1 to 3, wherein the overiayer (22) comprises a buffer layer (42) comprising tin oxide and zinc and/or magnesium, and/or the overiayer (22) comprises an insulating layer (44) comprising cadmium sulfide and/or cadmium sulfate.

5. The optoelectronic device (10) of any of claims 1 to 4, wherein the

semiconductor layer (24) comprises cadmium telluride.

8. The optoelectronic device (10) of any of claims 1 to 5, wherein the second conductive layer (26) comprises a metallic layer, preferably metallic silver.

P; 9 2 :i8

7. The optoelectronic device (10) of any of claims 1 to 8, including an internal light extraction region (34) on and/or adjacent the second surface (16) of the first substrate (12), wherein the internal light extraction region (34) comprises nanoparticies.

8. The optoelectronic device (10) of any of claims 1 to 7, including a functional layer (32) over the first surface (14) of the first substrate (12), wherein the functional layer (32) comprises an antireflective layer (33) comprising an oxide of a material selected from the group consisting of titanium, zirconium, zinc, tin, and mixtures thereof, and/or the functional layer (32) comprises an external fight extraction layer (35) comprising silica, alumina, zinc oxide, tiiania, zirconia, tin oxide, and mixtures thereof.

9. The optoelectronic device (10) of any of claims 1 to 8, wherein the first conductive layer (20) comprises a first region deposited from a first precursor materia! and a second region deposited from a second precursor material, preferably the first precursor material comprises MBTC and the second precursor material is selected from the group consisting of TTC and DBTA.

10. The optoelectronic device (10) of claim 1 , wherein the first substrate (12) comprises few iron glass, wherein the underiayer (18) comprises a sodium barrier layer (38) comprising silicon oxide and a bottom optical layer (38) comprising oxides of tin and zinc, wherein the first conductive layer (20) comprises tin oxide and tungsten, wherein the overlayer (22) comprises a buffer layer (42) comprising tin oxide and zinc, wherein the semiconductor layer (24) comprises cadmium te!luride, wherein the second conductive layer (26) comprises metallic silver, wherein the optoelectronic device (10) includes an internal light extraction region (34) comprising nanoparticies on and/or adjacent the second surface (16) of the first substrate (12), and wherein the optoelectronic device (10) comprises a functional layer (32) over the first surface (14) of the first substrate (12), wherein the functionai layer (32) comprises (i) an antireflective layer (33) comprising an oxide of a material selected from the group consisting of titanium, zirconium, zinc, fin, and mixtures thereof, and/or (is) the functional layer (32) comprises an externa! iight extraction layer (35) comprising silica, alumina, zinc oxide, titania, zirconia, tin oxide, and/or mixtures thereof.

11. The optoelectronic device (10) of any of claims 1 to 10, wherein the optoelectronic device (10) is selected from the group consisting of a solar call, a iight emitting diode, and an organic Iight emitting diode, preferably a solar ceil.

12. A method of making a making an article (110) in a glass drawdown process, comprising:

optionally, applying a first coating (118) over a first surface (114) of a glass ribbon (98) by at feast one coater (102) located on a first side (108) of a glass ribbon path (98); and

applying a second coating (120) over a second surface (118) of the glass ribbon (96) by at least one coater (100) located on a second side (108) of the glass ribbon path (98), wherein the second coating comprises (i) a buffer layer (42) comprising tin oxide and at least one material selected from the group consisting of zinc, indium, gallium, and magnesium, and/or (si) a transparent conductive oxide layer (20) comprising tin oxide doped with a material selected from the group consisting of tungsten, molybdenum, and niobium.

13. A giass drawdown assembly (81 ), comprising;

a receiver (83);

at least one vapor deposition coater (100, 102) located on a first side (106) and/or a second side (108) of a glass ribbon path (98); and

at feast one particle deposition device (104) located on the first side (108) and/or second side (108) of the glass ribbon path (98).

14. A vapor deposition coater (46, 47), comprising:

a plenum assembly (48) comprising at least one inlet planum (52, 54, 58) and at least one exhaust plenum (58, 80);

a nozzle block (50) comprising a discharge face (51);

at feast one discharge channel (82, 86, 70) in flow communication with the at least one inlet plenum (52, 54, 58); and

at least one exhaust conduit (78) in flow communication with the at least one exhaust plenum (58, 80),

wherein at least one discharge channel (82, 88, 70) is angled with respect to the discharge face (51) of the nozzle block (50).