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1. WO2016144869 - OPTOELECTRONIC DEVICE AND METHOD OF MAKING THE SAME

Publication Number WO/2016/144869
Publication Date 15.09.2016
International Application No. PCT/US2016/021178
International Filing Date 07.03.2016
IPC
H01L 51/52 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED)
52Details of devices
H01L 51/44 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
42specially adapted for sensing infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation; specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
44Details of devices
H01L 31/00 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
C03B 17/06 2006.01
CCHEMISTRY; METALLURGY
03GLASS; MINERAL OR SLAG WOOL
BMANUFACTURE OR SHAPING OF GLASS, OR OF MINERAL OR SLAG WOOL; SUPPLEMENTARY PROCESSES IN THE MANUFACTURE OR SHAPING OF GLASS, OR OF MINERAL OR SLAG WOOL
17Forming glass by flowing out, pushing-out, or drawing downwardly or laterally from forming slits or by overflowing over lips
06Forming glass sheets
H01L 51/00 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
CPC
C03C 17/36
CCHEMISTRY; METALLURGY
03GLASS; MINERAL OR SLAG WOOL
CCHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
17Surface treatment of glass, not in the form of fibres or filaments, by coating
34with at least two coatings having different compositions
36at least one coating being a metal
C03C 17/3631
CCHEMISTRY; METALLURGY
03GLASS; MINERAL OR SLAG WOOL
CCHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
17Surface treatment of glass, not in the form of fibres or filaments, by coating
34with at least two coatings having different compositions
36at least one coating being a metal
3602the metal being present as a layer
3631one layer at least containing a selenide or telluride
C03C 17/3668
CCHEMISTRY; METALLURGY
03GLASS; MINERAL OR SLAG WOOL
CCHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
17Surface treatment of glass, not in the form of fibres or filaments, by coating
34with at least two coatings having different compositions
36at least one coating being a metal
3602the metal being present as a layer
3668the multilayer coating having electrical properties
C03C 17/3678
CCHEMISTRY; METALLURGY
03GLASS; MINERAL OR SLAG WOOL
CCHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
17Surface treatment of glass, not in the form of fibres or filaments, by coating
34with at least two coatings having different compositions
36at least one coating being a metal
3602the metal being present as a layer
3668the multilayer coating having electrical properties
3678specially adapted for use in solar cells
C03C 2217/94
CCHEMISTRY; METALLURGY
03GLASS; MINERAL OR SLAG WOOL
CCHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
2217Coatings on glass
90Other aspects of coatings
94Transparent conductive oxide layers [TCO] being part of a multilayer coating
C23C 16/407
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
22characterised by the deposition of inorganic material, other than metallic material
30Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
40Oxides
407of zinc, germanium, cadmium, indium, tin, thallium or bismuth
Applicants
  • VITRO, S.A.B. de C.V. [MX]/[MX]
Inventors
  • MCCAMY, James W.
  • MA, Zhixun
  • KABAGAMBE, Benjamin
  • KORAM, Kwaku K.
  • HUNG, Cheng-Hung
  • NELIS, Gary J.
Agents
  • SIMINERIO, Andrew C.
Priority Data
14/963,73609.12.2015US
14/963,77809.12.2015US
14/963,79909.12.2015US
14/963,83209.12.2015US
62/131,93812.03.2015US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) OPTOELECTRONIC DEVICE AND METHOD OF MAKING THE SAME
(FR) DISPOSITIF OPTOÉLECTRONIQUE ET SON PROCÉDÉ DE FABRICATION
Abstract
(EN)
An optoelectronic device (10) includes a first substrate (12) having a first surface (14) and a second surface (16); an underlayer (18) located over the second surface (16); a first conductive layer (20) over the underlayer (18); an overlayer (22) over the first conductive layer (20); a semiconductor layer (24) over the first conductive layer (20); and a second conductive layer (26) over the semiconductor layer (24). The first conductive layer (20) includes a conductive oxide and at least one dopant selected from the group consisting of tungsten, molybdenum, niobium, and fluorine; and/or the overlayer (22) includes a buffer layer (42) including tin oxide and at least one material selected from the group consisting of zinc, indium, gallium, and magnesium.
(FR)
L'invention concerne un dispositif optoélectronique (10) qui comprend un premier substrat (12) ayant une première surface (14) et une seconde surface (16) ; une sous-couche (18) située sur la seconde surface (16) ; une première couche conductrice (20) sur la sous-couche (18) ; une surcouche (22) sur la première couche conductrice (20) ; une couche semi-conductrice (24) sur la première couche conductrice (20) ; et une seconde couche conductrice (26) sur la couche semi-conductrice (24). La première couche conductrice (20) comprend un oxyde conducteur et au moins un dopant choisi parmi le groupe constitué de tungstène, de molybdène, de niobium et de fluor ; et/ou la surcouche (22) comprend une couche tampon (42) comprenant de l'oxyde d'étain et au moins un matériau choisi parmi le groupe constitué de zinc, d'indium, de gallium et de magnésium.
Latest bibliographic data on file with the International Bureau