Processing

Please wait...

Settings

Settings

Goto Application

1. WO2016144436 - MULTI-BIT SPIN TORQUE TRANSFER MAGNETORESISTIVE RANDOM ACCESS MEMORY STT-MRAM USING SERIES MAGNETIC TUNNEL JUNCTIONS

Publication Number WO/2016/144436
Publication Date 15.09.2016
International Application No. PCT/US2016/015932
International Filing Date 01.02.2016
Chapter 2 Demand Filed 05.01.2017
IPC
G11C 11/16 2006.01
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
11Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
02using magnetic elements
16using elements in which the storage effect is based on magnetic spin effect
G11C 11/56 2006.01
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
11Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
56using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
G06F 12/0897 2016.01
GPHYSICS
06COMPUTING; CALCULATING OR COUNTING
FELECTRIC DIGITAL DATA PROCESSING
12Accessing, addressing or allocating within memory systems or architectures
02Addressing or allocation; Relocation
08in hierarchically structured memory systems, e.g. virtual memory systems
0802Addressing of a memory level in which the access to the desired data or data block requires associative addressing means, e.g. caches
0893Caches characterised by their organisation or structure
0897with two or more cache hierarchy levels
CPC
G11C 11/161
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
11Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
02using magnetic elements
16using elements in which the storage effect is based on magnetic spin effect
161details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
G11C 11/1659
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
11Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
02using magnetic elements
16using elements in which the storage effect is based on magnetic spin effect
165Auxiliary circuits
1659Cell access
G11C 11/1673
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
11Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
02using magnetic elements
16using elements in which the storage effect is based on magnetic spin effect
165Auxiliary circuits
1673Reading or sensing circuits or methods
G11C 11/5607
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
11Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
56using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
5607using magnetic storage elements
Y02D 10/00
YSECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
DCLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THIR OWN ENERGY USE
10Energy efficient computing
Applicants
  • QUALCOMM INCORPORATED [US]/[US]
Inventors
  • LU, Yu
  • LI, Xia
Agents
  • TOLER, Jeffrey G.
Priority Data
14/645,21311.03.2015US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) MULTI-BIT SPIN TORQUE TRANSFER MAGNETORESISTIVE RANDOM ACCESS MEMORY STT-MRAM USING SERIES MAGNETIC TUNNEL JUNCTIONS
(FR) MÉMOIRE VIVE MAGNÉTORÉSISTIVE À TRANSFERT DE COUPLE DE ROTATION MULTIBIT COMPRENANT DES SOUS-RÉSEAUX
Abstract
(EN)
A device includes a first magnetic tunnel junction (MTJ) element having a first read margin and a second MTJ element having a second read margin. The first read margin is greater than twice the second read margin. The device also includes an access transistor connected between the first MTJ element and the second MTJ element. A gate of the access transistor is coupled to a word line. The first MTJ element, the second MTJ element, and the access transistor form a multi-bit spin torque transfer magnetoresistive random access memory (STT-MRAM) memory cell.
(FR)
L'invention concerne un dispositif qui comprend un premier élément de jonction à effet tunnel magnétique (MTJ) ayant une première marge de lecture et un second élément MTJ ayant une seconde marge de lecture. La première marge de lecture est deux fois plus grande que la seconde marge de lecture. Le dispositif comprend également un transistor d'accès couplé entre le premier élément MTJ et le second élément MTJ. Une grille du transistor d'accès est couplée à une ligne de mots. Le premier élément MTJ, le second élément MTJ et le transistor d'accès forment une cellule de mémoire de mémoire vive magnétorésistive à transfert de couple de rotation multibit (STT-MRAM).
Latest bibliographic data on file with the International Bureau