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1. WO2016143774 - ORGANIC SEMICONDUCTOR LIQUID COMPOSITION, ORGANIC SEMICONDUCTOR ELEMENT AND METHOD FOR PRODUCING SAME

Publication Number WO/2016/143774
Publication Date 15.09.2016
International Application No. PCT/JP2016/057098
International Filing Date 08.03.2016
IPC
H01L 51/30 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
05specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier
30Selection of materials
C07C 69/773 2006.01
CCHEMISTRY; METALLURGY
07ORGANIC CHEMISTRY
CACYCLIC OR CARBOCYCLIC COMPOUNDS
69Esters of carboxylic acids; Esters of carbonic or haloformic acids
76Esters of carboxylic acids having an esterified carboxyl group bound to a carbon atom of a six-membered aromatic ring
773esterified with a hydroxy compound having the esterified hydroxy group bound to a carbon atom of a six-membered aromatic ring
C07C 69/92 2006.01
CCHEMISTRY; METALLURGY
07ORGANIC CHEMISTRY
CACYCLIC OR CARBOCYCLIC COMPOUNDS
69Esters of carboxylic acids; Esters of carbonic or haloformic acids
76Esters of carboxylic acids having an esterified carboxyl group bound to a carbon atom of a six-membered aromatic ring
84of monocyclic hydroxy carboxylic acids, the hydroxy groups and the carboxyl groups of which are bound to carbon atoms of a six-membered aromatic ring
92with etherified hydroxyl groups
C07F 7/08 2006.01
CCHEMISTRY; METALLURGY
07ORGANIC CHEMISTRY
FACYCLIC, CARBOCYCLIC, OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
7Compounds containing elements of Groups 4 or 14 of the Periodic System
02Silicon compounds
08Compounds having one or more C-Si linkages
H01L 21/336 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
334Multistep processes for the manufacture of devices of the unipolar type
335Field-effect transistors
336with an insulated gate
H01L 29/786 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76Unipolar devices
772Field-effect transistors
78with field effect produced by an insulated gate
786Thin-film transistors
CPC
C07F 7/08
CCHEMISTRY; METALLURGY
07ORGANIC CHEMISTRY
FACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
7Compounds containing elements of Groups 4 or 14 of the Periodic System
02Silicon compounds
08Compounds having one or more C—Si linkages
H01L 29/786
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
76Unipolar devices ; , e.g. field effect transistors
772Field effect transistors
78with field effect produced by an insulated gate
786Thin film transistors, ; i.e. transistors with a channel being at least partly a thin film
H01L 51/0003
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
0001Processes specially adapted for the manufacture or treatment of devices or of parts thereof
0002Deposition of organic semiconductor materials on a substrate
0003using liquid deposition, e.g. spin coating
H01L 51/0026
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
0001Processes specially adapted for the manufacture or treatment of devices or of parts thereof
0026Thermal treatment of the active layer, e.g. annealing
H01L 51/004
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
0032Selection of organic semiconducting materials, e.g. organic light sensitive or organic light emitting materials
0034Organic polymers or oligomers
004comprising aliphatic or olefinic chains, e.g. poly N-vinylcarbazol, PVC, PTFE
H01L 51/0055
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
0032Selection of organic semiconducting materials, e.g. organic light sensitive or organic light emitting materials
005Macromolecular systems with low molecular weight, e.g. cyanine dyes, coumarine dyes, tetrathiafulvalene
0052Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
0055containing five rings, e.g. pentacene
Applicants
  • 富士フイルム株式会社 FUJIFILM CORPORATION [JP]/[JP]
Inventors
  • 新居 輝樹 NIORI Teruki
Agents
  • 野口 恭弘 NOGUCHI Yasuhiro
Priority Data
2015-04851811.03.2015JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) ORGANIC SEMICONDUCTOR LIQUID COMPOSITION, ORGANIC SEMICONDUCTOR ELEMENT AND METHOD FOR PRODUCING SAME
(FR) COMPOSITION LIQUIDE SEMI-CONDUCTRICE ORGANIQUE, ÉLÉMENT SEMI-CONDUCTEUR ORGANIQUE ET SON PROCÉDÉ DE PRODUCTION
(JA) 有機半導体液組成物、有機半導体素子及びその作製方法
Abstract
(EN)
The purpose of the present invention is to provide: an organic semiconductor liquid composition which enables the achievement of an organic semiconductor film having high mobility; an organic semiconductor element which is produced using this organic semiconductor liquid composition; and a method for producing this organic semiconductor element. An organic semiconductor liquid composition according to the present invention is characterized by containing an organic semiconductor, a liquid crystalline compound and an insulating organic polymer. It is preferable that the insulating organic polymer contains a resin that has a structural unit represented by formula 1a and/or a structural unit represented by formula 1b. In the formulae, each R independently represents a linear or branched alkyl group having 1-20 carbon atoms.
(FR)
L'objet de la présente invention est de fournir : une composition liquide semi-conductrice organique qui permet l'obtention d'un film semi-conducteur organique ayant une mobilité élevée ; un élément semi-conducteur organique qui est produit au moyen de cette composition liquide semi-conductrice organique ; et un procédé de production de cet élément semi-conducteur organique. Une composition liquide semi-conductrice organique selon la présente invention est caractérisée en ce qu'elle contient un semi-conducteur organique, un composé cristallin liquide et un polymère organique isolant. Il est préférable que le polymère organique isolant contienne une résine qui a un motif structural représenté par la formule 1a et/ou un motif structural représenté par la formule 1b. Dans les formules, chaque R représente indépendamment un groupe alkyle linéaire ou ramifié ayant de 1 à 20 atomes de carbone.
(JA)
本発明の目的は、高移動度の有機半導体膜を得ることができる有機半導体液組成物、上記有機半導体液組成物を用いて作製された有機半導体素子及びその作製方法を提供することである。 本発明の有機半導体液組成物は、有機半導体と、液晶性化合物と、絶縁性有機高分子と、を含むことを特徴とする。上記絶縁性有機高分子が、式1aで表される構成単位及び/又は式1bで表される構成単位を有する樹脂を含むことが好ましい。式中、Rはそれぞれ独立に、炭素数1~20の直鎖又は分岐アルキル基を表す。
Also published as
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