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1. WO2016141579 - METHOD FOR MANUFACTURING CVD-SIC MATERIAL

Publication Number WO/2016/141579
Publication Date 15.09.2016
International Application No. PCT/CN2015/074065
International Filing Date 12.03.2015
IPC
C23C 16/32 2006.01
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
22characterised by the deposition of inorganic material, other than metallic material
30Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
32Carbides
C23C 16/455 2006.01
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
44characterised by the method of coating
455characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C30B 28/14 2006.01
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
28Production of homogeneous polycrystalline material with defined structure
12directly from the gas state
14by chemical reaction of reactive gases
CPC
C23C 16/325
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
22characterised by the deposition of inorganic material, other than metallic material
30Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
32Carbides
325Silicon carbide
C30B 28/14
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
28Production of homogeneous polycrystalline material with defined structure
12directly from the gas state
14by chemical reaction of reactive gases
C30B 29/36
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
29Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
10Inorganic compounds or compositions
36Carbides
Applicants
  • IBIDEN CO., LTD. [JP]/[JP]
  • WUHAN UNIVERSITY OF TECHNOLOGY [CN]/[CN]
  • GOTO, Takashi [JP]/[JP]
Inventors
  • GOTO, Takashi
  • ZHANG, Song
  • TU, Rong
  • HAN, Mingxu
Agents
  • BEIJING SANYOU INTELLECTUAL PROPERTY AGENCY LTD.
Priority Data
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) METHOD FOR MANUFACTURING CVD-SIC MATERIAL
(FR) PROCÉDÉ DE FABRICATION DE MATÉRIAU SIC PAR DÉPÔT CHIMIQUE EN PHASE VAPEUR
Abstract
(EN)
A method for manufacturing a CVD-SiC material using a carbon source composed of C2H2 and a silicon source composed of a halogenated silane as a raw material gas and forming polycrystalline SiC by the CVD method.
(FR)
Procédé de fabrication d'un matériau SiC par dépôt chimique en phase vapeur à l'aide d'une source de carbone composée de C2H2 et d'une source de silicium composée d'un silane halogéné en tant que gaz de matière première, ainsi que de formation de SiC polycristallin par le procédé de dépôt chimique en phase vapeur.
Also published as
Latest bibliographic data on file with the International Bureau