Processing

Please wait...

Settings

Settings

Goto Application

1. WO2016140975 - REVERSED FLEXIBLE TFT BACK-PANEL BY GLASS SUBSTRATE REMOVAL

Publication Number WO/2016/140975
Publication Date 09.09.2016
International Application No. PCT/US2016/020278
International Filing Date 01.03.2016
IPC
H01L 21/00 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
CPC
H01L 2227/323
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2227Indexing scheme for devices consisting of a plurality of semiconductor or other solid state components formed in or on a common substrate covered by group H01L27/00
32Devices including an organic light emitting device [OLED], e.g. OLED display
323Multistep processes for AMOLED
H01L 2227/326
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2227Indexing scheme for devices consisting of a plurality of semiconductor or other solid state components formed in or on a common substrate covered by group H01L27/00
32Devices including an organic light emitting device [OLED], e.g. OLED display
326Use of temporary substrate, e.g. for manufacturing of OLED dsiplays having an inorganic driving circuit
H01L 27/1218
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
12the substrate being other than a semiconductor body, e.g. an insulating body
1214comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
1218with a particular composition or structure of the substrate
H01L 27/1222
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
12the substrate being other than a semiconductor body, e.g. an insulating body
1214comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
1222with a particular composition, shape or crystalline structure of the active layer
H01L 27/1225
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
12the substrate being other than a semiconductor body, e.g. an insulating body
1214comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
1222with a particular composition, shape or crystalline structure of the active layer
1225with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
H01L 27/1248
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
12the substrate being other than a semiconductor body, e.g. an insulating body
1214comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
1248with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
Applicants
  • CBRITE INC. [US]/[US]
Inventors
  • SHIEH, Chan-Long
  • FOONG, Fatt
  • YU, Gang
  • WANG, Guangming
Agents
  • PARSONS, Robert, A.
Priority Data
14/635,86502.03.2015US
Publication Language English (en)
Filing Language English (EN)
Designated States
Title
(EN) REVERSED FLEXIBLE TFT BACK-PANEL BY GLASS SUBSTRATE REMOVAL
(FR) PANNEAU ARRIÈRE À TFT SOUPLE INVERSÉ PAR ÉLIMINATION DE SUBSTRAT EN VERRE
Abstract
(EN) The process of fabricating a flexible TFT back-panel includes depositing etch stop material on a glass support. A matrix of contact pads, gate electrodes and gate dielectric are deposited overlying the etch stop material. Vias are formed through the dielectric in communication with each pad. A matrix of TFTs is formed by depositing and patterning metal oxide semiconductor material to form an active layer of each TFT overlying the gate electrode. Source/drain metal is deposited on the active layer and in the vias in contact with the pads, the source/drain metal defining source/drain terminals of each TFT. Passivation material is deposited in overlying relationship to the TFTs. A color filter layer is formed on the passivation material and a flexible plastic carrier is affixed to the color filter. The glass support member and the etch stop material are then etched away to expose a surface of each of the pads.
(FR) L'invention concerne un procédé de fabrication d'un panneau arrière à transistors à couches minces (TFT) souple, qui consiste à déposer un matériau d'arrêt de gravure sur un support en verre. Une matrice de plots de contact, des électrodes de grille et un diélectrique de grille sont déposés au-dessus du matériau d'arrêt de gravure. Des trous d'interconnexion sont formés à travers le diélectrique, en communication avec chaque plot. Une matrice de TFT est formée par dépôt et formation des motifs de matériaux métal-oxyde-semi-conducteur afin de former une couche active de chaque TFT au-dessus de l'électrode de grille. Un métal de source/drain est déposé sur la couche active et dans les trous d'interconnexion en contact avec les plots, le métal de source/drain délimitant des bornes de source/drain de chaque TFT. Un matériau de passivation est déposé en relation de recouvrement sur les TFT. Une couche de filtre de couleur est formée sur le matériau de passivation, et un support en plastique souple est fixé sur le filtre de couleur. L'élément de support en verre et le matériau d'arrêt de gravure sont ensuite éliminés par gravure afin de faire apparaître une surface de chacun des plots.
Related patent documents
Latest bibliographic data on file with the International Bureau