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1. WO2016139755 - SEMICONDUCTOR DEVICE

Publication Number WO/2016/139755
Publication Date 09.09.2016
International Application No. PCT/JP2015/056247
International Filing Date 03.03.2015
IPC
H01L 21/8234 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
78with subsequent division of the substrate into plural individual devices
82to produce devices, e.g. integrated circuits, each consisting of a plurality of components
822the substrate being a semiconductor, using silicon technology
8232Field-effect technology
8234MIS technology
H01L 27/088 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
08including only semiconductor components of a single kind
085including field-effect components only
088the components being field-effect transistors with insulated gate
CPC
H01L 21/823487
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
78with subsequent division of the substrate into plural individual devices
82to produce devices, e.g. integrated circuits, each consisting of a plurality of components
822the substrate being a semiconductor, using silicon technology
8232Field-effect technology
8234MIS technology ; , i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
823487with a particular manufacturing method of vertical transistor structures, i.e. with channel vertical to the substrate surface
H01L 21/823885
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
78with subsequent division of the substrate into plural individual devices
82to produce devices, e.g. integrated circuits, each consisting of a plurality of components
822the substrate being a semiconductor, using silicon technology
8232Field-effect technology
8234MIS technology ; , i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
8238Complementary field-effect transistors, e.g. CMOS
823885with a particular manufacturing method of vertical transistor structures, i.e. with channel vertical to the substrate surface
H01L 23/5286
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
52Arrangements for conducting electric current within the device in operation from one component to another ; , i.e. interconnections, e.g. wires, lead frames
522including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
528Geometry or; layout of the interconnection structure
5286Arrangements of power or ground buses
H01L 27/0207
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
0203Particular design considerations for integrated circuits
0207Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique
H01L 27/088
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
08including only semiconductor components of a single kind
085including field-effect components only
088the components being field-effect transistors with insulated gate
H01L 27/092
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
08including only semiconductor components of a single kind
085including field-effect components only
088the components being field-effect transistors with insulated gate
092complementary MIS field-effect transistors
Applicants
  • ユニサンティス エレクトロニクス シンガポール プライベート リミテッド UNISANTIS ELECTRONICS SINGAPORE PTE. LTD. [SG]/[SG] (AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BE, BF, BG, BH, BJ, BN, BR, BW, BY, BZ, CA, CF, CG, CH, CI, CL, CM, CN, CO, CR, CU, CY, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, FR, GA, GB, GD, GE, GH, GM, GN, GQ, GR, GT, GW, HN, HR, HU, ID, IE, IL, IN, IR, IS, IT, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LV, LY, MA, MC, MD, ME, MG, MK, ML, MN, MR, MT, MW, MX, MY, MZ, NA, NE, NG, NI, NL, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SI, SK, SL, SM, SN, ST, SV, SY, SZ, TD, TG, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, UZ, VC, VN, ZA, ZM, ZW)
  • 舛岡 富士雄 MASUOKA Fujio [JP]/[JP] (US)
  • 中村 広記 NAKAMURA Hiroki [JP]/[JP] (US)
Inventors
  • 舛岡 富士雄 MASUOKA Fujio
  • 中村 広記 NAKAMURA Hiroki
Agents
  • 辻居 幸一 TSUJII Koichi
Priority Data
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) SEMICONDUCTOR DEVICE
(FR) DISPOSITIF À SEMI-CONDUCTEURS
(JA) 半導体装置
Abstract
(EN)
Provided is a highly integrated semiconductor device in which transistors are stacked. A semiconductor device provided with: a first first-conductivity-type semiconductor layer formed on a semiconductor substrate; a first columnar semiconductor layer formed on the semiconductor layer, in which are formed in the stated order from the substrate side a second first-conductivity-type semiconductor layer, a first body region, a third first-conductivity-type semiconductor layer, a fourth first-conductivity-type semiconductor layer, a second body region, a fifth first-conductivity-type semiconductor layer, a first second-conductivity-type semiconductor layer, a third body region, and a second second-conductivity-type semiconductor layer; a first output terminal connecting the fifth first-conductivity-type semiconductor layer and the first second-conductivity-type semiconductor layer; a second columnar semiconductor layer formed on the first output terminal, in which are formed in the stated order from the substrate side a third second-conductivity-type semiconductor layer, a fourth body region, and a fourth second-conductivity-type semiconductor layer; and gates corresponding to each body region.
(FR)
L'invention concerne un dispositif à semi-conducteurs à forte intégration dans lequel des transistors sont empilés. Le dispositif à semi-conducteurs comporte : une première couche semi-conductrice d'un premier type de conductivité formée sur un substrat semi-conducteur; une première couche semi-conductrice en colonne formée sur la couche semi-conductrice, dans laquelle sont formées, dans cet ordre à partir du côté substrat, une deuxième couche semi-conductrice du premier type de conductivité, une première zone de corps, une troisième couche semi-conductrice du premier type de conductivité, une quatrième couche semi-conductrice du premier type de conductivité, une deuxième zone de corps, une cinquième couche semi-conductrice du premier type de conductivité, une première couche semi-conductrice d'un second type de conductivité, une troisième zone de corps, et une deuxième couche semi-conductrice du second type de conductivité; une première borne de sortie connectant la cinquième couche semi-conductrice du premier type de conductivité et la première couche semi-conductrice du second type de conductivité; une deuxième couche semi-conductrice en colonne formée sur la première borne de sortie, dans laquelle sont formées, dans cet ordre à partir du côté substrat, une troisième couche semi-conductrice du second type de conductivité, une quatrième zone de corps, et une quatrième couche semi-conductrice du second type de conductivité; et des grilles correspondant à chaque zone de corps.
(JA)
トランジスタを積層する高集積な半導体装置を提供する。半導体基板上に形成された第1の第1導電型半導体層と、前記半導体層上に形成された第1の柱状半導体層であって、第2の第1導電型半導体層と第1のボディ領域と第3の第1導電型半導体層と第4の第1導電型半導体層と第2のボディ領域と第5の第1導電型半導体層と第1の第2導電型半導体層と第3のボディ領域と第2の第2導電型半導体層とが基板側からこの順に形成された前記第1の柱状半導体層と、前記第5の第1導電型半導体層と前記第1の第2導電型半導体層とを接続する第1の出力端子と、前記第1の出力端子上に形成された第2の柱状半導体層であって、第3の第2導電型半導体層と第4のボディ領域と第4の第2導電型半導体層とが基板側からこの順に形成された前記第2の柱状半導体層と、各ボディ領域に対応する各ゲートを備えた半導体装置。
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