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1. WO2016138781 - LIGHT EMITTING DIODE AND MANUFACTURING METHOD THEREFOR

Publication Number WO/2016/138781
Publication Date 09.09.2016
International Application No. PCT/CN2015/097539
International Filing Date 16.12.2015
IPC
H01L 33/10 2010.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
10with a light reflecting structure, e.g. semiconductor Bragg reflector
H01L 33/00 2010.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
CPC
H01L 2933/0016
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2933Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
0008Processes
0016relating to electrodes
H01L 2933/0025
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2933Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
0008Processes
0025relating to coatings
H01L 2933/0066
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2933Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
0008Processes
0033relating to semiconductor body packages
0066relating to arrangements for conducting electric current to or from the semiconductor body
H01L 33/0093
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
005Processes
0093Wafer bonding; Removal of the growth substrate
H01L 33/22
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
20with a particular shape, e.g. curved or truncated substrate
22Roughened surfaces, e.g. at the interface between epitaxial layers
H01L 33/30
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
26Materials of the light emitting region
30containing only elements of group III and group V of the periodic system
Applicants
  • 天津三安光电有限公司 TIANJIN SANAN OPTOELECTRONICS CO., LTD. [CN]/[CN]
Inventors
  • 蒙成 MENG, Cheng
  • 吴俊毅 WU, Chun-Yi
  • 陶青山 TAO, Ching-Shan
  • 王笃祥 WANG, Duxiang
Priority Data
201510097522.205.03.2015CN
Publication Language Chinese (ZH)
Filing Language Chinese (ZH)
Designated States
Title
(EN) LIGHT EMITTING DIODE AND MANUFACTURING METHOD THEREFOR
(FR) DIODE ÉLECTROLUMINESCENTE ET SON PROCÉDÉ DE FABRICATION
(ZH) 发光二极管及其制作方法
Abstract
(EN)
Provided are a light emitting diode and a manufacturing method therefor,improving the external light extraction efficiency of the light emitting diode effectively. The light emitting diode comprises a luminous epitaxial stack (150), wherein the luminous epitaxial stack (150) is provided with a first surface and a second surface oppositely, and comprises an n-type semiconductor layer (151), a luminous layer (152) and a p-type semiconductor layer (153); the light transmitting dielectric layer (140) is positioned on the second surface of the luminous epitaxial stack (150) in which conductive through holes (142) are formed; the light transmitting conductive layer (130) is positioned on the lateral surface, far away from the luminous epitaxial stack (150), of the light transmitting dielectric layer (140); the metal reflective layer (120) is positioned on the lateral surface, far away from the light transmitting dielectric layer (140), of the light transmitting conductive layer (130); the refractive index of the light transmitting dielectric layer (140) is lower than both of the luminous epitaxial stack (150) and the light transmitting conductive layer (130), the luminous epitaxial stack (150), the light emitting dielectric layer (140) and the light transmitting conductive layer (130) form an enhanced reflection system.
(FR)
L'invention concerne une diode électroluminescente et son procédé de fabrication, qui améliorent l'efficacité d'extraction de lumière externe de la diode électroluminescente de façon efficace. La diode électroluminescente comprend une pile épitaxiale lumineuse (150), la pile épitaxiale lumineuse (150) étant dotée d'une première surface et d'une seconde surface opposées et comprend une couche de semi-conducteur de type n (151), une couche lumineuse (152) et une couche de semi-conducteur de type p (153); la couche diélectrique de transmission de la lumière (140) est placée sur la seconde surface de la pile épitaxiale lumineuse (150) dans laquelle des trous traversants conducteurs (142) sont formés; la couche conductrice de transmission de la lumière (130) est placée sur la surface latérale, très éloignée de la pile épitaxiale lumineuse (150) de la couche diélectrique de transmission de la lumière (140); la couche réfléchissante métallique (120) est placée sur la surface latérale, très éloignée de la couche diélectrique de transmission de la lumière (140), de la couche conductrice de transmission de la lumière (130); l'indice de réfraction de la couche diélectrique de transmission de la lumière (140) est inférieur à ceux de la pile épitaxiale lumineuse (150) et de la couche conductrice de transmission de la lumière (130), la pile épitaxiale lumineuse (150), la couche diélectrique d'émission de la lumière (140) et la couche conductrice de transmission de la lumière (130) forment un système de réflexion amélioré.
(ZH)
提供了一种发光二极管及其制作方法,其有效提高了发光二极管的外部取光效率。该发光二极管包括发光外延叠层(150),具有相对的第一表面和第二表面,包含n型半导体层(151)、发光层(152)和p型半导体层(153);透光性介电层(140),位于发光外延叠层(150)的第二表面上,其内部具有导电通孔(142);透光性导电层(130),位于透光性介电层(140)之远离发光外延叠层(150)的一侧表面上;金属反射层(120),位于透光性导电层(130)之远离透光性介电层(140)的一侧表面上;透光性介电层(140)的折射率均小于发光外延叠层(150)、透光性导电层(130)的折射率,发光外延叠层(150)、透光性介电层(140)和透光性导电层(130)构成一增强反射系统。
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