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1. WO2016138725 - ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF, X-RAY FLAT PANEL DETECTOR AND CAMERA SYSTEM

Publication Number WO/2016/138725
Publication Date 09.09.2016
International Application No. PCT/CN2015/084549
International Filing Date 21.07.2015
IPC
H01L 27/146 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
CPC
H01L 27/1443
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
1443with at least one potential jump or surface barrier
H01L 27/1446
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
1446in a repetitive configuration
H01L 27/146
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
H01L 27/14612
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
14601Structural or functional details thereof
14609Pixel-elements with integrated switching, control, storage or amplification elements
14612involving a transistor
H01L 27/1462
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
14601Structural or functional details thereof
1462Coatings
H01L 27/14625
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
14601Structural or functional details thereof
14625Optical elements or arrangements associated with the device
Applicants
  • 京东方科技集团股份有限公司 BOE TECHNOLOGY GROUP CO., LTD. [CN]/[CN]
Inventors
  • 舒适 SHU, Shi
  • 高锦成 GAO, Jincheng
  • 徐传祥 XU, Chuanxiang
  • 张锋 ZHANG, Feng
Agents
  • 北京市柳沈律师事务所 LIU, SHEN & ASSOCIATES
Priority Data
201510095303.003.03.2015CN
Publication Language Chinese (ZH)
Filing Language Chinese (ZH)
Designated States
Title
(EN) ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF, X-RAY FLAT PANEL DETECTOR AND CAMERA SYSTEM
(FR) SUBSTRAT DE MATRICE ET SON PROCÉDÉ DE FABRICATION, DÉTECTEUR DE RAYONS X À PANNEAU PLAT ET SYSTÈME DE CAMÉRA
(ZH) 阵列基板及其制作方法、X射线平板探测器、摄像系统
Abstract
(EN)
An array substrate and manufacturing method thereof, X-ray flat panel detector and camera system. The array substrate is partitioned into a plurality of detection units. Each of the detection units is provided with a first electrode (20) and a photoelectric conversion structure (30) therein, wherein the first electrode (20) is provided at an opposite side of an incidence side of the photoelectric conversion structure (30) and is electrically connected to the photoelectric conversion structure (30), a conductive reflective layer (40) is located between the first electrode (20) and the photoelectric conversion structure (30), and a surface of the reflective layer (40) towards the photoelectric conversion structure (30) is a reflective surface. The array substrate in an embodiment of the present invention increases a light ray utilization ratio, thereby increasing detection precision of the X-ray flat panel detector.
(FR)
L'invention concerne un substrat de matrice et son procédé de fabrication, un détecteur de rayons X à panneau plat et un système de caméra. Le substrat de matrice est partitionné en une pluralité d'unités de détection. Chacune des unités de détection est pourvue d'une première électrode (20) et d'une structure de conversion photoélectrique (30) en son sein, la première électrode (20) étant disposée du côté opposé à un côté d'incidence de la structure de conversion photoélectrique (30) et étant électriquement connectée à la structure de conversion photoélectrique (30), une couche conductrice réfléchissante (40) étant située entre la première électrode (20) et la structure de conversion photoélectrique (30), et une surface de la couche réfléchissante (40) orientée vers la structure de conversion photoélectrique (30) étant une surface réfléchissante. Le substrat de matrice selon un mode de réalisation de la présente invention augmente un taux d'utilisation des rayons de lumière, ce qui permet d'augmenter la précision de détection du détecteur de rayons X à panneau plat.
(ZH)
一种阵列基板及其制作方法、X射线平板探测器和摄像系统。所述阵列基板被划分为多个检测单元,每个所述检测单元内均设置有第一电极(20)和光电转换结构(30),所述第一电极(20)设置在所述光电转换结构(30)的入光侧的相反侧且与所述光电转换结构(30)电连接,其中,所述第一电极(20)和所述光电转换结构(30)之间还包括有导电的反射层(40),所述反射层(40)朝向所述光电转换结构(30)的表面为反射面。本发明实施例所述的阵列基板能够提高光线的利用率,使得X射线平板探测器的检测精度提高。
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