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1. WO2016137979 - AUTO CAPACITANCE TUNER CURRENT COMPENSATION TO CONTROL ONE OR MORE FILM PROPERTIES THROUGH TARGET LIFE

Publication Number WO/2016/137979
Publication Date 01.09.2016
International Application No. PCT/US2016/019108
International Filing Date 23.02.2016
IPC
H01L 21/203 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
203using physical deposition, e.g. vacuum deposition, sputtering
H01J 49/36 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
49Particle spectrometers or separator tubes
26Mass spectrometers or separator tubes
34Dynamic spectrometers
36Radio frequency spectrometers, e.g. Bennett-type spectrometers; Redhead-type spectrometers
CPC
C23C 14/345
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
22characterised by the process of coating
34Sputtering
3435Applying energy to the substrate during sputtering
345using substrate bias
C23C 14/54
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
22characterised by the process of coating
54Controlling or regulating the coating process
H01J 37/32174
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
32Gas-filled discharge tubes, ; e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
32082Radio frequency generated discharge
32174Circuits specially adapted for controlling the RF discharge
H01J 37/32183
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
32Gas-filled discharge tubes, ; e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
32082Radio frequency generated discharge
32174Circuits specially adapted for controlling the RF discharge
32183Matching circuits, impedance matching circuits per se H03H7/38 and H03H7/40
H03J 7/04
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
JTUNING RESONANT CIRCUITS; SELECTING RESONANT CIRCUITS
7Automatic frequency control; Automatic scanning over a band of frequencies
02Automatic frequency control
04where the frequency control is accomplished by varying the electrical characteristics of a non-mechanically adjustable element or where the nature of the frequency controlling element is not significant
H03L 7/06
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
LAUTOMATIC CONTROL, STARTING, SYNCHRONISATION, OR STABILISATION OF GENERATORS OF ELECTRONIC OSCILLATIONS OR PULSES
7Automatic control of frequency or phase; Synchronisation
06using a reference signal applied to a frequency- or phase-locked loop
Applicants
  • APPLIED MATERIALS, INC. [US]/[US]
Inventors
  • GE, Zhenbin
  • GUPTA, Vivek
  • ALLEN, Adolph Miller
  • HANSON, Ryan
Agents
  • TABOADA, Alan
Priority Data
15/050,40922.02.2016US
62/119,77623.02.2015US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) AUTO CAPACITANCE TUNER CURRENT COMPENSATION TO CONTROL ONE OR MORE FILM PROPERTIES THROUGH TARGET LIFE
(FR) COMPENSATION DE COURANT DE SYNTONISEUR DE CAPACITÉ AUTOMATIQUE POUR COMMANDER UNE OU PLUSIEURS PROPRIÉTÉS DE FILM PAR LA DURÉE DE VIE CIBLE
Abstract
(EN)
In some embodiments a method of depositing a metal-containing layer atop a substrate disposed in a physical vapor deposition (PVD) chamber includes: providing a plasma forming gas to a processing region of the PVD chamber; providing a first amount of RF power to a target assembly disposed opposite the substrate to form a plasma within the processing region of the PVD chamber; sputtering source material from the target assembly to deposit a metal-containing layer onto the substrate, wherein the source material is at a first erosion state; and tuning an auto capacitance tuner coupled to a substrate support while sputtering source material to maintain an ion energy at a surface of the substrate within a predetermined range as the target erodes from the first erosion state to a second erosion state.
(FR)
Selon certains modes de réalisation, un procédé de dépôt d'une couche contenant un métal au-dessus d'un substrat disposé dans une chambre de dépôt physique en phase vapeur consiste à : fournir un gaz de formation de plasma à une région de traitement de la chambre de dépôt physique en phase vapeur ; fournir une première quantité de puissance RF à un ensemble cible disposé à l'opposé du substrat pour former un plasma à l'intérieur de la région de traitement de la chambre de dépôt physique en phase vapeur ; pulvériser de la matière brute à partir de l'ensemble cible pour déposer une couche contenant du métal sur le substrat, laquelle matière brute est dans un premier état d'érosion ; et accorder un syntoniseur de capacité automatique couplé à un support de substrat tout en pulvérisant la matière brute afin de conserver une énergie ionique au niveau d'une surface du substrat à l'intérieur d'une plage prédéterminée lorsque la cible s'érode pour passer du premier état d'érosion à un second état d'érosion.
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