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1. WO2016137606 - CYCLIC SEQUENTIAL PROCESSES FOR FORMING HIGH QUALITY THIN FILMS

Publication Number WO/2016/137606
Publication Date 01.09.2016
International Application No. PCT/US2016/014004
International Filing Date 20.01.2016
IPC
H01L 21/205 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
205using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
CPC
C23C 16/045
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
04Coating on selected surface areas, e.g. using masks
045Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
C23C 16/308
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
22characterised by the deposition of inorganic material, other than metallic material
30Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
308Oxynitrides
C23C 16/345
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
22characterised by the deposition of inorganic material, other than metallic material
30Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
34Nitrides
345Silicon nitride
C23C 16/36
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
22characterised by the deposition of inorganic material, other than metallic material
30Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
36Carbonitrides
C23C 16/401
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
22characterised by the deposition of inorganic material, other than metallic material
30Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
40Oxides
401containing silicon
C23C 16/402
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
22characterised by the deposition of inorganic material, other than metallic material
30Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
40Oxides
401containing silicon
402Silicon dioxide
Applicants
  • APPLIED MATERIALS, INC. [US]/[US]
Inventors
  • LIANG, Jingmei
  • LEE, Jung Chan
  • GUO, Jinrui
  • SRINIVASAN, Mukund
Agents
  • PATTERSON, B. Todd
Priority Data
62/119,71423.02.2015US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) CYCLIC SEQUENTIAL PROCESSES FOR FORMING HIGH QUALITY THIN FILMS
(FR) PROCESSUS SÉQUENTIELS CYCLIQUES POUR FORMER DES FILMS MINCES DE HAUTE QUALITÉ
Abstract
(EN)
Methods are described for a cyclical deposition and curing process. The implementations described herein provide a cyclic sequential deposition and curing process for filling features formed on a substrate. Features are filled to ensure electrical isolation of features in integrated circuits formed on a substrate. The processes described herein use flowable film deposition processes that have been effective in reducing voids or seams produced in features formed on a substrate. However, conventional gap-filling methods using flowable films typically contain dielectric materials that have undesirable physical and electrical properties. In particular, film density is not uniform, film dielectric constant varies across the film thickness, film stability is not ideal, film refractive index is inconsistent, and resistance to dilute hydrofluoric acid (DHF) is not ideal in conventional flowable films. The cyclic sequential deposition and curing processes address the issues described herein to create films with higher quality and increased lifetime.
(FR)
L'invention concerne des procédés pour un processus cyclique de dépôt et de durcissement. Les modes de réalisation décrits par les présentes concernent un processus séquentiel cyclique de dépôt et de durcissement pour remplir des éléments formés sur un substrat. Des éléments sont remplis pour assurer l'isolation électrique d'éléments dans des circuits intégrés formés sur un substrat. Les processus décrits par les présentes utilisent des processus de dépôt de film pouvant s'écouler qui se sont révélés être efficaces dans la réduction des vides ou des discontinuités produites dans des éléments formés sur un substrat. Toutefois, les procédés de bouchage de trous classiques utilisant des films pouvant s'écouler contiennent généralement des matériaux diélectriques qui possèdent des propriétés physiques et électriques indésirables. En particulier, la densité du film n'est pas uniforme, la constante diélectrique du film varie à travers l'épaisseur du film, la stabilité du film n'est pas idéale, l'indice de réfraction du film est incompatible, et la résistance à l'acide fluorhydrique dilué (DHF) n'est pas idéale dans des films pouvant s'écouler classiques. Les processus séquentiels cycliques de dépôt et de durcissement abordent les problèmes décrits par les présentes pour créer des films ayant une meilleure qualité et une plus grande durée de vie.
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