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1. WO2016137171 - MULTILAYER MAGNETIC THIN FILM STACK AND NON-VOLATILE MEMORY DEVICE INCLUDING SAME

Publication Number WO/2016/137171
Publication Date 01.09.2016
International Application No. PCT/KR2016/001688
International Filing Date 22.02.2016
IPC
H01L 43/02 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
43Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
02Details
H01L 43/10 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
43Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
10Selection of materials
H01L 43/12 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
43Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
12Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
CPC
H01L 43/02
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
43Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
02Details
H01L 43/10
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
43Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
10Selection of materials
H01L 43/12
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
43Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
12Processes or apparatus peculiar to the manufacture or treatment of these devices or of parts thereof
Applicants
  • 고려대학교 산학협력단 KOREA UNIVERSITY RESEARCH AND BUSINESS FOUNDATION [KR]/[KR]
Inventors
  • 임상호 LIM, Sang Ho
  • 윤석진 YUN, Seok Jin
  • 이성래 LEE, Seong Rae
Agents
  • 특허법인 누리 NURY PATENT LAW FIRM
Priority Data
10-2015-002488523.02.2015KR
Publication Language Korean (KO)
Filing Language Korean (KO)
Designated States
Title
(EN) MULTILAYER MAGNETIC THIN FILM STACK AND NON-VOLATILE MEMORY DEVICE INCLUDING SAME
(FR) EMPILEMENT MULTICOUCHE À FILM MAGNÉTIQUE MINCE ET DISPOSITIF DE MÉMOIRE NON VOLATILE LE COMPRENANT
(KO) 다층 자성 박막 스택 및 이를 포함하는 비휘발성 메모리 소자
Abstract
(EN)
The present invention relates to a multilayer magnetic thin film stack and a non-volatile memory device using a magnetic tunneling junction (MTJ). A multilayer magnetic thin film stack according to an embodiment of the present invention comprises a tunneling barrier layer, a magnetic fixed layer on a first surface of the tunneling barrier layer, and a magnetic free layer on a second surface opposite to the first surface of the tunneling barrier layer. In an embodiment, at least one of the magnetic fixed layer and the magnetic free layer has a body-centered cubic structure due to the tunnel barrier layer, and comprises: a first CoFe-based magnetic layer containing cobalt (Co) and iron (Fe); a second magnetic layer interlayer-magnetic-exchange-coupled with the CoFe-based magnetic layer; and a first complex spacer layer placed between the first CoFe-based magnetic layer and the second magnetic layer and including a laminated structure of a tantalum (Ta) layer adjacent to the CoFe-based magnetic layer and a ruthenium (Ru) layer adjacent to the second magnetic layer.
(FR)
La présente invention concerne un empilement multicouche à film magnétique mince et un dispositif de mémoire non volatile utilisant une jonction tunnel magnétique (MTJ). L'empilement multicouche à film magnétique mince selon un mode de réalisation de la présente invention comprend une couche barrière tunnel, une couche magnétique fixe sur une première surface de la couche barrière tunnel, et une couche magnétique libre sur une seconde surface, à l'opposé de la première surface de la couche barrière tunnel. Dans un mode de réalisation, au moins une de la couche magnétique fixe et de la couche magnétique libre possède une structure cubique centrée due à la couche barrière tunnel, et comprend : une première couche magnétique à base de CoFe contenant du cobalt (Co) et du fer (Fe) ; une seconde couche magnétique à couplage d'échange magnétique entre couche avec la couche magnétique à base de CoFe ; une première couche d'espacement complexe, placée entre la première couche magnétique à base de CoFe et la seconde couche magnétique et comprenant une structure stratifiée composée d'une couche de tantale (Ta), adjacente à la couche à base de CoFe, et d'une couche de ruthénium (Ru), adjacente à la seconde couche magnétique.
(KO)
본 발명은 다층 자기 박막 스택 및 자기 터널링 접합(MTJ)를 이용한 비휘발성 자기 메모리 소자에 관한 것이다. 본 발명의 일 실시예에 따른 다층 자기 박막 스택은 터널링 장벽층, 상기 터널링 장벽층의 제 1 면 상의 자기 고정층, 및 상기 터널링 장벽층의 상기 제 1 면과 반대되는 제 2 면 상의 자기 자유층을 포함하는 자기 터널링 접합을 포함하는 다층 자기 박막 스택이다. 일 실시예에서, 상기 자기 고정층 및 상기 자기 자유층 중 적어도 하나는, 상기 터널링 장벽층에 인한 체심 입방 구조를 가지며, 코발트 (Co) 및 철 (Fe)을 함유하는 CoFe계 제 1 자성층; 상기 CoFe계 자성층과 층간 자기 교환 결합되는 제 2 자성층; 및 상기 CoFe계 제 1 자성층과 상기 제 2 자성층 사이에 배치되고, 상기 CoFe계 자성층에 인접하는 탄탈륨 (Ta)층 및 상기 제 2 자성층에 인접하는 루테늄 (Ru)층의 적층 구조를 포함하는 제 1 복합 스페이서층을 포함한다.
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