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1. WO2016136595 - VAPOR DEPOSITION UNIT, VAPOR DEPOSITION DEVICE, AND VAPOR DEPOSITION METHOD

Publication Number WO/2016/136595
Publication Date 01.09.2016
International Application No. PCT/JP2016/054746
International Filing Date 18.02.2016
IPC
C23C 14/24 2006.01
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
22characterised by the process of coating
24Vacuum evaporation
H01L 51/50 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED)
H05B 33/10 2006.01
HELECTRICITY
05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
BELECTRIC HEATING; ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR
33Electroluminescent light sources
10Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
CPC
C23C 14/042
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
04Coating on selected surface areas, e.g. using masks
042using masks
C23C 14/044
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
04Coating on selected surface areas, e.g. using masks
042using masks
044using masks to redistribute rather than totally prevent coating, e.g. producing thickness gradient
C23C 14/24
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
22characterised by the process of coating
24Vacuum evaporation
C23C 4/134
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
4Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
12characterised by the method of spraying
134Plasma spraying
H01L 21/203
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20Deposition of semiconductor materials on a substrate, e.g. epitaxial growth ; solid phase epitaxy
203using physical deposition, e.g. vacuum deposition, sputtering
H01L 2221/1052
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2221Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
10Applying interconnections to be used for carrying current between separate components within a device
1005Formation and after-treatment of dielectrics
1052Formation of thin functional dielectric layers
Applicants
  • シャープ株式会社 SHARP KABUSHIKI KAISHA [JP]/[JP]
Inventors
  • 小林 勇毅 KOBAYASHI, Yuhki
  • 川戸 伸一 KAWATO, Shinichi
Agents
  • 特許業務法人HARAKENZO WORLD PATENT & TRADEMARK HARAKENZO WORLD PATENT & TRADEMARK
Priority Data
2015-03532925.02.2015JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) VAPOR DEPOSITION UNIT, VAPOR DEPOSITION DEVICE, AND VAPOR DEPOSITION METHOD
(FR) UNITÉ DE DÉPÔT EN PHASE VAPEUR, DISPOSITIF DE DÉPÔT EN PHASE VAPEUR ET PROCÉDÉ DE DÉPÔT EN PHASE VAPEUR
(JA) 蒸着ユニット、蒸着装置、および蒸着方法
Abstract
(EN)
Provided is a vapor deposition unit (1) equipped with a vapor deposition mask (10), a restricting plate unit (20) having restricting plates (22), and a vapor deposition source (30). The vapor deposition source (30), seen in plan view, has: a plurality of first openings (31) which eject vapor deposition particles and which are each provided at a location facing a restricting plate opening (23) between the restricting plates (22); and at least one second opening (32) for pressure relief, which is provided at a location not facing the restricting plate opening (23).
(FR)
L'invention concerne une unité de dépôt en phase vapeur (1) pourvue d'un masque de dépôt en phase vapeur (10), d'une unité (20) de plaques de restriction ayant des plaques de restriction (22) et d'une source de dépôt en phase vapeur (30). La source de dépôt en phase vapeur (30), vue dans une vue en plan, a : une pluralité de premières ouvertures (31) qui éjectent des particules pour le dépôt en phase vapeur et qui sont chacune ménagées en un emplacement en regard d'une ouverture (23) entre plaques de restriction entre les plaques de restriction (22); et au moins une seconde ouverture (32) pour la décompression, qui est ménagée au niveau d'un emplacement qui n'est pas en regard de l'ouverture (23) entre plaques de restriction.
(JA)
 蒸着ユニット(1)は、蒸着マスク(10)と、制限板(22)を有する制限板ユニット(20)と、蒸着源(30)と、を備えている。蒸着源(30)は、平面視で、制限板(22)間の制限板開口(23)間にそれぞれ設けられた蒸着粒子射出用の複数の第1開口部(31)と、制限板開口(23)に対向しない位置に設けられた少なくとも1つの圧力抜き用の第2開口部(32)とを有している。
Also published as
Latest bibliographic data on file with the International Bureau