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1. WO2016136015 - PIEZOELECTRIC VIBRATION COMPONENT AND APPLICATION METHOD

Publication Number WO/2016/136015
Publication Date 01.09.2016
International Application No. PCT/JP2015/078631
International Filing Date 08.10.2015
IPC
H01L 41/313 2013.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
41Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
22Processes or apparatus specially adapted for the assembly, manufacture or treatment of piezo-electric or electrostrictive devices or of parts thereof
31Applying piezo-electric or electrostrictive parts or bodies onto an electrical element or another base
312by laminating or bonding of piezo-electric or electrostrictive bodies
313by metal fusing or with adhesives
H01L 21/60 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/06-H01L21/326162
60Attaching leads or other conductive members, to be used for carrying current to or from the device in operation
H01L 41/053 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
41Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02Details
04of piezo-electric or electrostrictive elements
053Mounts, supports, enclosures or casings
H03H 3/02 2006.01
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
3Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
007for the manufacture of electromechanical resonators or networks
02for the manufacture of piezo-electric or electrostrictive resonators or networks
H03H 9/10 2006.01
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
9Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
02Details
05Holders or supports
10Mounting in enclosures
CPC
H01L 2224/29191
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
28Structure, shape, material or disposition of the layer connectors prior to the connecting process
29of an individual layer connector
29001Core members of the layer connector
29099Material
2919with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
29191The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene
H01L 2224/29339
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
28Structure, shape, material or disposition of the layer connectors prior to the connecting process
29of an individual layer connector
29001Core members of the layer connector
29099Material
29198with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
29298Fillers
29299Base material
293with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
29338the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
29339Silver [Ag] as principal constituent
H01L 2224/29344
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
28Structure, shape, material or disposition of the layer connectors prior to the connecting process
29of an individual layer connector
29001Core members of the layer connector
29099Material
29198with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
29298Fillers
29299Base material
293with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
29338the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
29344Gold [Au] as principal constituent
H01L 2224/29355
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
28Structure, shape, material or disposition of the layer connectors prior to the connecting process
29of an individual layer connector
29001Core members of the layer connector
29099Material
29198with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
29298Fillers
29299Base material
293with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
29338the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
29355Nickel [Ni] as principal constituent
H01L 2224/2939
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
28Structure, shape, material or disposition of the layer connectors prior to the connecting process
29of an individual layer connector
29001Core members of the layer connector
29099Material
29198with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
29298Fillers
29299Base material
2939with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
H01L 24/29
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
24Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
28Structure, shape, material or disposition of the layer connectors prior to the connecting process
29of an individual layer connector
Applicants
  • 株式会社村田製作所 MURATA MANUFACTURING CO., LTD. [JP]/[JP]
Inventors
  • 永原 恒治 NAGAHARA, Koji
  • 大代 宗幸 DAIDAI, Muneyuki
  • 斉藤 政浩 SAITO, Masahiro
  • 杉政 淳 SUGIMASA, Atsushi
  • 北山 裕樹 KITAYAMA, Hiroki
  • 矢後 滋久 YAGO, Shigehisa
Agents
  • 稲葉 良幸 INABA, Yoshiyuki
Priority Data
2015-03430224.02.2015JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) PIEZOELECTRIC VIBRATION COMPONENT AND APPLICATION METHOD
(FR) COMPOSANT À VIBRATION PIÉZOÉLECTRIQUE ET PROCÉDÉ D'APPLICATION
(JA) 圧電振動部品及び塗布方法
Abstract
(EN)
A piezoelectric vibration component (40) is provided with a piezoelectric vibrator (20), a substrate (10), and an electroconductive adhesive (12) for bonding the piezoelectric vibrator (20) to the substrate (10). The electroconductive adhesive (12) contains a silicone-based base resin (121), a crosslinking agent (121), an electroconductive filler (122), and an insulating filler (123). The weight average molecular weight of the silicone-based base resin (121) is 20000 to 102000. The number average molecular weight of the crosslinking agent (121) is 1950 to 4620. The grain diameter of the electroconductive filler (122) and the insulating filler (123) is 10 μm or less.
(FR)
L'invention concerne un composant à vibration piézoélectrique (40) qui est pourvu d'un vibrateur piézoélectrique (20), d'un substrat (10), et d'un adhésif électroconducteur (12) pour coller le vibrateur piézoélectrique (20) au substrat (10). L'adhésif électroconducteur (12) contient une résine de base à base de silicone (121), un agent de réticulation (121), une charge électroconductrice (122) et une charge isolante (123). La masse moléculaire moyenne en poids de la résine de base à base de silicone (121) est de 20000 à 102000. La masse moléculaire moyenne en nombre de l'agent de réticulation (121) est de 1950 à 4620. Le diamètre des grains de la charge électroconductrice (122) et de la charge isolante (123) est inférieur ou égal à 10 µm.
(JA)
 圧電振動部品(40)は、圧電振動子(20)と、基板(10)と、圧電振動子(20)を基板(10)に接合する導電性接着剤(12)とを備える。導電性接着剤(12)は、シリコーン系ベース樹脂(121)と、架橋剤(121)と、導電性フィラー(122)と、絶縁性フィラー(123)と、を含有する。シリコーン系ベース樹脂(121)の重量平均分子量は、20000以上102000以下である。架橋剤(121)の数平均分子量は、1950以上4620以下である。導電性フィラー(122)及び絶縁性フィラー(123)の粒径は、10μm以下である。
Also published as
Latest bibliographic data on file with the International Bureau