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1. WO2016135249 - OPTOELECTRONIC DEVICE

Publication Number WO/2016/135249
Publication Date 01.09.2016
International Application No. PCT/EP2016/053993
International Filing Date 25.02.2016
IPC
H01L 31/0304 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
0248characterised by their semiconductor bodies
0256characterised by the material
0264Inorganic materials
0304including, apart from doping materials or other impurities, only AIIIBV compounds
H01L 31/0352 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
0248characterised by their semiconductor bodies
0352characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
H01L 27/146 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
H01L 31/105 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
08in which radiation controls flow of current through the device, e.g. photoresistors
10characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
101Devices sensitive to infra-red, visible or ultra-violet radiation
102characterised by only one potential barrier or surface barrier
105the potential barrier being of the PIN type
A61F 2/14 2006.01
AHUMAN NECESSITIES
61MEDICAL OR VETERINARY SCIENCE; HYGIENE
FFILTERS IMPLANTABLE INTO BLOOD VESSELS; PROSTHESES; DEVICES PROVIDING PATENCY TO, OR PREVENTING COLLAPSING OF, TUBULAR STRUCTURES OF THE BODY, e.g. STENTS; ORTHOPAEDIC, NURSING OR CONTRACEPTIVE DEVICES; FOMENTATION; TREATMENT OR PROTECTION OF EYES OR EARS; BANDAGES, DRESSINGS OR ABSORBENT PADS; FIRST-AID KITS
2Filters implantable into blood vessels; Prostheses, i.e. artificial substitutes or replacements for parts of the body; Appliances for connecting them with the body; Devices providing patency to, or preventing collapsing of, tubular structures of the body, e.g. stents
02Prostheses implantable into the body
14Eye parts, e.g. lenses, corneal implants; Artificial eyes
A61N 1/05 2006.01
AHUMAN NECESSITIES
61MEDICAL OR VETERINARY SCIENCE; HYGIENE
NELECTROTHERAPY; MAGNETOTHERAPY; RADIATION THERAPY; ULTRASOUND THERAPY
1Electrotherapy; Circuits therefor
02Details
04Electrodes
05for implantation or insertion into the body, e.g. heart electrode
CPC
A61F 9/0017
AHUMAN NECESSITIES
61MEDICAL OR VETERINARY SCIENCE; HYGIENE
FFILTERS IMPLANTABLE INTO BLOOD VESSELS; PROSTHESES; DEVICES PROVIDING PATENCY TO, OR PREVENTING COLLAPSING OF, TUBULAR STRUCTURES OF THE BODY, e.g. STENTS; ORTHOPAEDIC, NURSING OR CONTRACEPTIVE DEVICES; FOMENTATION; TREATMENT OR PROTECTION OF EYES OR EARS; BANDAGES, DRESSINGS OR ABSORBENT PADS; FIRST-AID KITS
9Methods or devices for treatment of the eyes; Devices for putting-in contact lenses; Devices to correct squinting; Apparatus to guide the blind; Protective devices for the eyes, carried on the body or in the hand
0008Introducing ophthalmic products into the ocular cavity or retaining products therein
0017implantable in, or in contact with, the eye, e.g. ocular inserts
A61N 1/0543
AHUMAN NECESSITIES
61MEDICAL OR VETERINARY SCIENCE; HYGIENE
NELECTROTHERAPY; MAGNETOTHERAPY; RADIATION THERAPY; ULTRASOUND THERAPY
1Electrotherapy; Circuits therefor
02Details
04Electrodes
05for implantation or insertion into the body, e.g. heart electrode
0526Head electrodes
0543Retinal electrodes
G02B 5/3066
GPHYSICS
02OPTICS
BOPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
5Optical elements other than lenses
30Polarising elements
3025Polarisers, i.e. arrangements capable of producing a definite output polarisation state from an unpolarised input state
3066involving the reflection of light at a particular angle of incidence, e.g. Brewster's angle
H01L 27/14643
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
14643Photodiode arrays; MOS imagers
H01L 27/14694
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
14683Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
14694The active layers comprising only AIIIBV compounds, e.g. GaAs, InP
H01L 31/03048
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
0248characterised by their semiconductor bodies
0256characterised by the material
0264Inorganic materials
0304including, apart from doping materials or other impurities, only AIIIBV compounds
03046including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
03048comprising a nitride compounds, e.g. InGaN
Applicants
  • ALCATEL LUCENT [FR]/[FR]
Inventors
  • GARREAU, Alexandre
  • BRENOT, Romain
  • AUBRY, Raphaël
Agents
  • BERTHIER, Karine
Priority Data
15305288.125.02.2015EP
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) OPTOELECTRONIC DEVICE
(FR) DISPOSITIF OPTOÉLECTRONIQUE
Abstract
(EN)
The optoelectronic device contains a matrix of optoelectronic components including semiconductor optical amplifiers SOAs, the said semiconductor optical amplifiers SOAs containing an active layer of gallium nitride GaN having multiple InGaN/GaAsN or InGaN/AlGaN quantum wells on a substrate of p-doped gallium nitride and covered with a layer of n-doped gallium nitride. The p-doped gallium nitride Ga N substrate forms a column of p-Ga N covered with a layer of an insulator in biocompatible material. The device can contain a matrix having multiple electronic components of different heights. The optoelectronic component can be aphotodiode or a semiconductor optical amplifier SOA. This optoelectronic device can be used in epiretinal or subretinal prostheses. A single epiretinal or subretinal prosthesis can contain a matrix of photodiodes and a matrix of semiconductor optical amplifiers SOAs.
(FR)
L'invention concerne un dispositif optoélectronique qui contient une matrice de composants optoélectroniques incluant des amplificateurs optiques semi-conducteurs (SOA), lesdits amplificateurs optiques semi-conducteurs (SOA) contenant une couche active de nitrure de gallium (GaN) comportant plusieurs puits quantiques d'InGaN/GaAsN ou d'InGaN/AlGaN sur un substrat de nitrure de gallium dopé de type p et recouvert d'une couche de nitrure de gallium dopé de type n. Le substrat de nitrure de gallium (GaN) dopé de type p forme une colonne de GaN de type p recouvert d'une couche d'un isolant en matériau biocompatible. Le dispositif peut contenir une matrice comportant plusieurs composants électroniques de hauteurs différentes. Le composant optoélectronique peut être une photodiode ou un amplificateur optique semi-conducteur (SOA). Le dispositif électronique peut être utilisé dans des prothèses épirétiniennes ou sous-rétiniennes. Une seule prothèse épirétinienne ou sous-rétinienne peut contenir une matrice de photodiodes et une matrice d'amplificateurs optiques semi-conducteurs (SOA).
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