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1. WO2016134954 - DEVICE MANUFACTURING METHOD AND PATTERNING DEVICES FOR USE IN DEVICE MANUFACTURING METHOD

Publication Number WO/2016/134954
Publication Date 01.09.2016
International Application No. PCT/EP2016/052519
International Filing Date 05.02.2016
IPC
G03F 7/20 2006.01
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
20Exposure; Apparatus therefor
G06F 17/50 2006.01
GPHYSICS
06COMPUTING; CALCULATING OR COUNTING
FELECTRIC DIGITAL DATA PROCESSING
17Digital computing or data processing equipment or methods, specially adapted for specific functions
50Computer-aided design
G03F 1/70 2012.01
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
1Originals for photomechanical production of textured or patterned surfaces, e.g. masks, photo-masks or reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
68Preparation processes not covered by groups G03F1/20-G03F1/5096
70Adapting basic layout or design of masks to lithographic process requirements, e.g. second iteration correction of mask patterns for imaging
H01L 21/033 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
027Making masks on semiconductor bodies for further photolithographic processing, not provided for in group H01L21/18 or H01L21/34165
033comprising inorganic layers
H01L 21/311 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
3105After-treatment
311Etching the insulating layers
H01L 21/768 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
71Manufacture of specific parts of devices defined in group H01L21/7086
768Applying interconnections to be used for carrying current between separate components within a device
CPC
G03F 1/70
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
1Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
68Preparation processes not covered by groups G03F1/20 - G03F1/50
70Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging
G03F 7/0002
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
0002Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
G03F 7/70466
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
70Exposure apparatus for microlithography
70425Imaging strategies, e.g. for increasing throughput, printing product fields larger than the image field, compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching, double patterning
70466Multiple exposures, e.g. combination of fine and coarse exposures, double patterning, multiple exposures for printing a single feature, mix-and-match
H01L 21/0337
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
033comprising inorganic layers
0334characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
0337characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
Applicants
  • ASML NETHERLANDS B.V. [NL]/[NL]
Inventors
  • WITTEBROOD, Friso
Agents
  • PETERS, John
Priority Data
15156118.023.02.2015EP
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) DEVICE MANUFACTURING METHOD AND PATTERNING DEVICES FOR USE IN DEVICE MANUFACTURING METHOD
(FR) PROCÉDÉ DE FABRICATION DE DISPOSITIF ET DISPOSITIFS DE TRAÇAGE DE MOTIFS UTILISABLES DANS LE PROCÉDÉ DE FABRICATION DE DISPOSITIF
Abstract
(EN)
A functional device pattern (348) is formed in a self-aligned multiple patterning process (e.g. SADP, SAQP). A first grid structure is formed on the substrate (312), the first grid structure comprising a plurality of elements (326-332) in a first periodic arrangement. The first grid structure may be formed for example by a self-aligned pitch multiplication process. The first grid structure is then modified at specific locations in accordance with a cut mask (334), thereby to define the functional device pattern. In an intermediate step, a second grid structure is formed overlying the first grid structure (340). The second grid structure comprises a plurality of elements (350) in a second periodic arrangement. The elements (350) of the second grid structure work in addition to the cut mask constrain the locations at which the first grid structure is modified. Overlay and CD requirements of the cut mask are relaxed.
(FR)
L'invention concerne un motif (348) de dispositif fonctionnel qui est formé selon un processus de traçage de motifs multiples autoalignés (par ex. SADP, SAQP). Une première structure de réseau est formée sur le substrat (312), la première structure de réseau comprenant une pluralité d'éléments (326-332) dans un premier agencement périodique. La première structure de réseau peut être formée par exemple par un processus de multiplication de pas autoalignés. La première structure de réseau est alors modifiée à des positions spécifiques selon un masque (334) de coupe, afin de définir ainsi le motif de dispositif fonctionnel. Dans une étape intermédiaire, une seconde structure de réseau est formée de manière à recouvrir la première structure de réseau (340). La seconde structure de réseau comprend une pluralité d'éléments (350) dans un second agencement périodique. Les éléments (350) de la seconde structure de réseau fonctionnent en addition des contraintes du masque de coupe aux positions auxquelles la première structure de réseau est modifiée. Les besoins de superposition et de CD du masque de coupe sont réduits.
Also published as
Latest bibliographic data on file with the International Bureau