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1. WO2016134332 - CHIP-SCALE POWER SCALABLE ULTRAVIOLET OPTICAL SOURCE

Publication Number WO/2016/134332
Publication Date 25.08.2016
International Application No. PCT/US2016/018808
International Filing Date 19.02.2016
IPC
H01S 5/125 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
10Construction or shape of the optical resonator
12the resonator having a periodic structure, e.g. in distributed feed-back  lasers
125Distributed Bragg reflector  lasers
G01J 1/42 2006.1
GPHYSICS
01MEASURING; TESTING
JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED, VISIBLE OR ULTRA-VIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
1Photometry, e.g. photographic exposure meter
42using electric radiation detectors
G02B 1/11 2015.1
GPHYSICS
02OPTICS
BOPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
1Optical elements characterised by the material of which they are made; Optical coatings for optical elements
10Optical coatings produced by application to, or surface treatment of, optical elements
11Anti-reflection coatings
CPC
H01S 2301/166
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
2301Functional characteristics
16Semiconductor lasers with special structural design to influence the modes, e.g. specific multimode
166Single transverse or lateral mode
H01S 3/109
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
3Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
10Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
106by controlling a device placed within the cavity
108using a non-linear optical device, e.g. exhibiting Brillouin- or Raman-scattering
109Frequency multiplying, e.g. harmonic generation
H01S 3/2383
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
3Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
23Arrangements of two or more lasers not provided for in groups H01S3/02 - H01S3/22, e.g. tandem arrangements of separate active media
2383Parallel arrangements
H01S 5/0085
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
005Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
0085for modulating the output, i.e. the laser beam is modulated outside the laser cavity
H01S 5/0092
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
005Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
0092for nonlinear frequency conversion, e.g. second harmonic generation [SHG] or sum- or difference-frequency generation outside the laser cavity
H01S 5/0225
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
02Structural details or components not essential to laser action
022Mountings; Housings
0225Out-coupling of light
Applicants
  • HRL LABORATORIES, LLC [US]/[US]
Inventors
  • SAYYAH, Keyvan
  • EFIMOV, Oleg M.
  • PATTERSON, Pamela R.
  • KISELEV, Andrey A.
Agents
  • GALLENSON, Mavis S.
Priority Data
62/118,67620.02.2015US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) CHIP-SCALE POWER SCALABLE ULTRAVIOLET OPTICAL SOURCE
(FR) SOURCE OPTIQUE ULTRAVIOLETTE ÉVOLUTIVE À L'ÉCHELLE D'UNE PUCE
Abstract
(EN)
A chip scale ultra violet laser source includes a plurality of laser elements on a substrate each including a back cavity mirror, a tapered gain medium, an outcoupler, a nonlinear crystal coupled to the outcoupler with a front facet that has a first coating that is anti-reflectivity (AR) to a fundamental wavelength of the laser element and high reflectivity (HR) to ultra violet wavelengths, and has an exit facet that has a second coating that has HR to a fundamental wavelength of the laser element and AR to the ultra violet wavelengths, a photodetector coupled to the outcoupler, a phase modulator coupled to the photodetector and coupled to the back cavity mirror, and a master laser diode on the substrate coupled to the phase modulator of each laser element. Each laser element emits an ultra violet beamlet and is frequency and phase locked to the master laser diode.
(FR)
L'invention concerne une source laser ultraviolette à l'échelle d'une puce qui comprend une pluralité d'éléments laser sur un substrat comprenant chacun un miroir de cavité arrière, un milieu amplificateur évasé, un coupleur de sortie, un cristal non linéaire couplé au coupleur de sortie à l'aide d'une facette avant qui présente un premier revêtement qui est anti-réfléchissant (AR) à une longueur d'onde fondamentale de l'élément laser et qui est hautement réfléchissante (HR) aux longueurs d'onde ultraviolettes, et a une facette de sortie qui a un second revêtement qui est HR à une longueur d'onde fondamentale de l'élément laser et AR aux longueurs d'onde ultraviolettes, un photodétecteur couplé au coupleur de sortie, un modulateur de phase couplé au photodétecteur et couplé au miroir de cavité arrière, et une diode laser maîtresse sur le substrat couplée au modulateur de phase de chaque élément laser. Chaque élément laser émet un petit faisceau ultraviolet et est verrouillé en fréquence et en phase par rapport à la diode laser maîtresse.
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