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1. WO2016133115 - SELF-ORGANIZED-FILM FORMING METHOD, PATTERN FORMING METHOD, AND SELF-ORGANIZED-FILM FORMING COMPOSITION

Publication Number WO/2016/133115
Publication Date 25.08.2016
International Application No. PCT/JP2016/054567
International Filing Date 17.02.2016
IPC
B05D 7/24 2006.01
BPERFORMING OPERATIONS; TRANSPORTING
05SPRAYING OR ATOMISING IN GENERAL; APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TO SURFACES, IN GENERAL
DPROCESSES FOR APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TO SURFACES, IN GENERAL
7Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials
24for applying particular liquids or other fluent materials
C09D 201/00 2006.01
CCHEMISTRY; METALLURGY
09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
DCOATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
201Coating compositions based on unspecified macromolecular compounds
H01L 21/3065 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
306Chemical or electrical treatment, e.g. electrolytic etching
3065Plasma etching; Reactive-ion etching
CPC
B05D 7/24
BPERFORMING OPERATIONS; TRANSPORTING
05SPRAYING OR ATOMISING IN GENERAL; APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TO SURFACES, IN GENERAL
DPROCESSES FOR APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TO SURFACES, IN GENERAL
7Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials
24for applying particular liquids or other fluent materials
C09D 201/00
CCHEMISTRY; METALLURGY
09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
DCOATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
201Coating compositions based on unspecified macromolecular compounds
H01L 21/3065
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
302to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
306Chemical or electrical treatment, e.g. electrolytic etching
3065Plasma etching; Reactive-ion etching
Applicants
  • JSR株式会社 JSR CORPORATION [JP]/[JP]
Inventors
  • 小松 裕之 KOMATSU Hiroyuki
  • 小田 智博 ODA Tomohiro
  • 成岡 岳彦 NARUOKA Takehiko
  • 永井 智樹 NAGAI Tomoki
Agents
  • 天野 一規 AMANO Kazunori
Priority Data
2015-03219920.02.2015JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) SELF-ORGANIZED-FILM FORMING METHOD, PATTERN FORMING METHOD, AND SELF-ORGANIZED-FILM FORMING COMPOSITION
(FR) PROCÉDÉ DE FORMATION DE FILM AUTO-ORGANISÉ, PROCÉDÉ DE FORMATION DE MOTIF ET COMPOSITION DE FORMATION DE FILM AUTO-ORGANISÉ
(JA) 自己組織化膜の形成方法、パターン形成方法及び自己組織化膜形成用組成物
Abstract
(EN)
The present invention relates to a self-organized-film forming method comprising a step for forming a coating film on a substrate by using a self-organized-film forming composition that contains a solvent and at least one type of a first polymer that can form a phase-separated structure through self-organization, wherein the solvent contains an aromatic-ring-containing compound. It is preferred that self-organized-film forming method further comprise a step for heating the coating film. It is preferred that the solvent contain the aromatic-ring-containing compound at 80 mass% or less and 50 mass% or more. It is preferred that the self-organized-film forming composition further contain a second polymer having smaller surface free energy than the first polymer and that the second polymer be unevenly distributed above the self-organized film.
(FR)
La présente invention concerne un procédé de formation de film auto-organisé comprenant une étape de formation d'un film de revêtement sur un substrat au moyen d'une composition de formation de film auto-organisé qui contient un solvant et au moins un type d'un premier polymère qui peut former une structure à séparation de phases par le biais d'une auto-organisation, le solvant contenant un composé contenant un noyau aromatique. Il est préférable qu'un procédé de formation de film auto-organisé comprenne en outre une étape de chauffage du film de revêtement. Il est préférable que le solvant contienne le composé contenant un noyau aromatique dans une proportion de 80% en masse au maximum et de 50% en masse au minimum. Il est préféré que la composition de formation de film auto-organisé contienne en outre un second polymère présentant une énergie libre de surface inférieure à celle du premier polymère et que le second polymère soit réparti de manière inégale au-dessus du film auto-organisé.
(JA)
 本発明は、自己組織化により相分離構造を形成しうる1種又は複数種の第1重合体と溶媒とを含有する自己組織化膜形成用組成物により、基板上に塗布膜を形成する工程を備え、上記溶媒が、芳香環含有化合物を含有する自己組織化膜の形成方法である。上記塗布膜を加熱する工程をさらに備えることが好ましい。上記溶媒における上記芳香環含有化合物の含有量としては、80質量%以下が好ましく、50質量%以上が好ましい。上記自己組織化膜形成用組成物が、上記第1重合体よりも表面自由エネルギーが小さい第2重合体をさらに含有し、上記第2重合体が自己組織化膜の上方に偏在することが好ましい。
Also published as
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