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1. WO2016125321 - SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING SAME

Publication Number WO/2016/125321
Publication Date 11.08.2016
International Application No. PCT/JP2015/066766
International Filing Date 10.06.2015
IPC
H01L 33/38 2010.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
36characterised by the electrodes
38with a particular shape
H01L 21/28 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/268158
H01L 29/41 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
40Electrodes
41characterised by their shape, relative sizes or dispositions
H01L 33/02 2010.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
CPC
H01L 33/02
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
H01L 33/20
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
20with a particular shape, e.g. curved or truncated substrate
H01L 33/38
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
36characterised by the electrodes
38with a particular shape
H01L 33/382
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
36characterised by the electrodes
38with a particular shape
382the electrode extending partially in or entirely through the semiconductor body
H01L 33/44
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
44characterised by the coatings, e.g. passivation layer or anti-reflective coating
Applicants
  • 株式会社 東芝 KABUSHIKI KAISHA TOSHIBA [JP]/[JP]
Inventors
  • 大野 浩志 ONO, Hiroshi
  • 田島 純平 TAJIMA, Jumpei
  • 布上 真也 NUNOUE, Shinya
Agents
  • 日向寺 雅彦 HYUGAJI, Masahiko
Priority Data
2015-02212106.02.2015JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING SAME
(FR) ÉLÉMENT ÉMETTANT DE LA LUMIÈRE SEMI-CONDUCTEUR ET PROCÉDÉ DE FABRICATION DE CELUI-CI
(JA) 半導体発光素子及びその製造方法
Abstract
(EN)
According to an embodiment of the present invention, a semiconductor light emitting element includes a base body, first to third semiconductor layers, a first conductive section, and a first insulating section. The base body has a first surface including an outer end region and an inner region. The second semiconductor layer is provided between the inner region and the first semiconductor layer. The third semiconductor layer is provided between the first and second semiconductor layers. A part of the first conductive section is provided between the base body and the second semiconductor layer. The first insulating section overlaps the outer end region in the first direction toward the first semiconductor layer from the second semiconductor layer. The thickness of the first insulating section at a position overlapping a base body side surface in the first direction is more than the thickness of the first insulating section at a position at a distance from the base body side surface in the direction intersecting the first direction.
(FR)
Selon un mode de réalisation de la présente invention, un élément émettant de la lumière semi-conducteur comprend un corps de base, des première à troisième couches semi-conductrices, une première section conductrice, et une première section isolante. Le corps de base comporte une première surface comprenant une région d'extrémité extérieure et une région intérieure. La deuxième couche semi-conductrice est située entre la région intérieure et la première couche semi-conductrice. La troisième couche semi-conductrice est située entre les première et deuxième couches semi-conductrices. Une partie de la première section conductrice est située entre le corps de base et la deuxième couche semi-conductrice. La première section isolante chevauche la région d'extrémité extérieure dans la première direction vers la première couche semi-conductrice à partir de la deuxième couche semi-conductrice. L'épaisseur de la première section isolante à une position chevauchant une surface latérale de corps de base dans la première direction est supérieure à l'épaisseur de la première section isolante à une position à une certaine distance de la surface latérale du corps de base dans la direction croisant la première direction.
(JA)
 実施形態によれば、半導体発光素子は、基体と、第1~第3半導体層と、第1導電部と、第1絶縁部と、を含む。基体は、外縁領域と内側領域とを含む第1面を有する。第2半導体層は、内側領域と第1半導体層との間に設けられる。第3半導体層は、第1、第2半導体層の間に設けられる。第1導電部の一部は、基体と第2半導体層との間に設けられる。第1絶縁部は、第2半導体層から第1半導体層に向かう第1方向において外縁領域と重なる。第1方向において基体側面と重なる位置における第1絶縁部の厚さは、第1方向と交差する方向において基体側面から離れた位置における第1絶縁部の厚さよりも厚い。 
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