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Machine translation
1. (WO2016105377) APPARATUS AND METHODS OF FORMING FIN STRUCTURES WITH SIDEWALL LINER
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2016/105377    International Application No.:    PCT/US2014/072089
Publication Date: 30.06.2016 International Filing Date: 23.12.2014
IPC:
H01L 29/78 (2006.01), H01L 21/336 (2006.01)
Applicants: INTEL CORPORATION [US/US]; 2200 Mission College Boulevard Santa Clara, California 95054 (US) (AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BE, BF, BG, BH, BJ, BN, BR, BW, BY, BZ, CA, CF, CG, CH, CI, CL, CM, CN, CO, CR, CU, CY, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, FR, GA, GB, GD, GE, GH, GM, GN, GQ, GR, GT, GW, HN, HR, HU, ID, IE, IL, IN, IR, IS, IT, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LV, LY, MA, MC, MD, ME, MG, MK, ML, MN, MR, MT, MW, MX, MY, MZ, NA, NE, NG, NI, NL, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SI, SK, SL, SM, SN, ST, SV, SY, SZ, TD, TG, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, UZ, VC, VN, ZA, ZM, ZW only).
RACHMADY, Willy [US/US]; (US) (US only).
METZ, Matthew V. [US/US]; (US) (US only).
MOHAPATRA, Chandra S. [IN/US]; (US) (US only).
DEWEY, Gilbert [US/US]; (US) (US only).
KAVALIEROS, Jack T. [US/US]; (US) (US only).
MURTHY, Anand S. [US/US]; (US) (US only).
RAHHAL-ORABI, Nadia M. [US/US]; (US) (US only).
GHANI, Tahir [US/US]; (US) (US only).
GLASS, Glenn A. [US/US]; (US) (US only)
Inventors: RACHMADY, Willy; (US).
METZ, Matthew V.; (US).
MOHAPATRA, Chandra S.; (US).
DEWEY, Gilbert; (US).
KAVALIEROS, Jack T.; (US).
MURTHY, Anand S.; (US).
RAHHAL-ORABI, Nadia M.; (US).
GHANI, Tahir; (US).
GLASS, Glenn A.; (US)
Agent: ORTIZ, Kathy J.; (US)
Priority Data:
Title (EN) APPARATUS AND METHODS OF FORMING FIN STRUCTURES WITH SIDEWALL LINER
(FR) APPAREIL ET PROCÉDÉS DE FORMATION DE STRUCTURES D'AILETTE AVEC DOUBLURE DE PAROI LATÉRALE
Abstract: front page image
(EN)An includes an epitaxial sub-fin structure disposed on a substrate, wherein a first portion of the sub-fin structure is disposed within a portion of the substrate, and a second portion of the sub-fin structure is disposed adjacent a dielectric material. A fin device structure is disposed on the sub-fin structure, wherein the fin device structure comprises the epitaxial material. A liner is disposed between the second portion of the sub-fin structure and the dielectric material. Other embodiments are described herein.
(FR)La présente invention concerne une structure de sous-ailette épitaxiale disposée sur un substrat, une première partie de la structure de sous-ailette étant disposée à l'intérieur d'une partie du substrat, et une seconde partie de la structure de sous-ailette étant disposée de manière adjacente à un matériau diélectrique. Une structure de dispositif d'ailette est disposée sur la structure de sous-ailette, la structure de dispositif d'ailette comprenant le matériau épitaxial. Une doublure est disposée entre la seconde partie de la structure de sous-ailette et le matériau diélectrique. L'invention concerne également d'autres modes de réalisation.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)