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1. (WO2016105146) LIGHT EMITTING DIODE AND LIGHT EMITTING DIODE ARRAY COMPRISING SAME
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2016/105146    International Application No.:    PCT/KR2015/014236
Publication Date: 30.06.2016 International Filing Date: 24.12.2015
IPC:
H01L 33/10 (2010.01)
Applicants: LG INNOTEK CO., LTD. [KR/KR]; 98, Huam-ro Jung-gu Seoul 04637 (KR)
Inventors: LEE, Keon Hwa; (KR).
CHOI, Byeong Kyun; (KR)
Agent: PARK, Young Bok; (KR)
Priority Data:
10-2014-0187884 24.12.2014 KR
Title (EN) LIGHT EMITTING DIODE AND LIGHT EMITTING DIODE ARRAY COMPRISING SAME
(FR) DIODE ÉLECTROLUMINESCENTE ET MATRICE DE DIODES ÉLECTROLUMINESCENTES LA COMPRENANT
(KO) 발광소자 및 이를 포함하는 발광소자 어레이
Abstract: front page image
(EN)Provided in one embodiment is a light emitting diode comprising: a light emitting structure including a first conductive semiconductor layer, an active layer on top of the first conductive semiconductor layer, and a second conductive semiconductor layer on top of the active layer; a first electrode arranged on a portion of the first conductive semiconductor layer; an insulating layer, which is arranged on a portion of the first electrode, the first conductive semiconductor layer, the active layer, and the second conductive semiconductor layer, and which has a DBR structure; and a second electrode arranged on the second conductive semiconductor layer, wherein the first electrode comes into contact with the insulating layer via a first surface and is exposed to the insulating layer via a second surface opposite the first surface.
(FR)Selon un mode de réalisation, l'invention concerne une diode électroluminescente comprenant : une structure électroluminescente comprenant une première couche de semi-conducteur conductrice, une couche active sur la partie supérieure de la première couche de semi-conducteur conductrice, et une seconde couche de semi-conducteur conductrice sur la partie supérieure de la couche active; une première électrode disposée sur une partie de la première couche de semi-conducteur conductrice; une couche isolante, qui est disposée sur une partie de la première électrode, la première couche de semi-conducteur conductrice, la couche active et la seconde couche de semi-conducteur conductrice, et qui comporte une structure DBR; et une seconde électrode disposée sur la seconde couche de semi-conducteur conductrice, la première électrode entrant en contact avec la couche isolante par l'intermédiaire d'une première surface et étant mise en contact avec la couche isolante par l'intermédiaire d'une seconde surface en regard de la première surface.
(KO)실시예는 제1 도전형 반도체층, 상기 제1 도전형 반도체층 상의 활성층, 및 상기 활성층 상의 제2 도전형 반도체층을 포함하는 발광 구조물; 상기 제1 도전형 반도체층의 일부 영역에 배치되는 제1 전극; 상기 제1 전극과 상기 제1 도전형 반도체층과 상기 활성층 및 상기 제2 도전형 반도체층의 일부 영역 상에 배치되고, DBR 구조의 절연층; 및 상기 제2 도전형 반도체층 상에 배치되는 제2 전극을 포함하고, 상기 제1 전극은, 제1 면 상에서 상기 절연층과 접촉하고, 상기 제1 면과 마주보는 제2 면에서 노출되는 발광소자를 제공한다.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG).
Publication Language: Korean (KO)
Filing Language: Korean (KO)