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1. (WO2016105027) METHOD FOR MANUFACTURING LIGHT EXTRACTION SUBSTRATE FOR ORGANIC LIGHT EMITTING DIODE, LIGHT EXTRACTION SUBSTRATE FOR ORGANIC LIGHT EMITTING DIODE, AND ORGANIC LIGHT EMITTING DIODE COMPRISING SAME
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2016/105027    International Application No.:    PCT/KR2015/013902
Publication Date: 30.06.2016 International Filing Date: 18.12.2015
IPC:
H01L 51/56 (2006.01), H01L 51/52 (2006.01)
Applicants: CORNING PRECISION MATERIALS CO., LTD [KR/KR]; 30, Manjeondang-gil, Tangjeong-myeon Asan-si Chungcheongnam-do 336-841 (KR)
Inventors: LEE, Joo Young; (KR).
KIM, Dong Hyun; (KR).
KIM, Seo Hyun; (KR)
Agent: KIM, Seon-Min; (KR)
Priority Data:
10-2014-0188383 24.12.2014 KR
Title (EN) METHOD FOR MANUFACTURING LIGHT EXTRACTION SUBSTRATE FOR ORGANIC LIGHT EMITTING DIODE, LIGHT EXTRACTION SUBSTRATE FOR ORGANIC LIGHT EMITTING DIODE, AND ORGANIC LIGHT EMITTING DIODE COMPRISING SAME
(FR) PROCÉDÉ DE FABRICATION D'UN SUBSTRAT D'EXTRACTION DE LUMIÈRE POUR DIODE ÉLECTROLUMINESCENTE ORGANIQUE, SUBSTRAT D'EXTRACTION DE LUMIÈRE POUR DIODE ÉLECTROLUMINESCENTE ORGANIQUE, ET DIODE ÉLECTROLUMINESCENTE ORGANIQUE LE COMPORTANT
(KO) 유기발광소자용 광추출 기판 제조방법, 유기발광소자용 광추출 기판 및 이를 포함하는 유기발광소자
Abstract: front page image
(EN)The present invention relates to a method for manufacturing a light extraction substrate for an organic light emitting diode, a light extraction substrate for an organic light emitting diode, and an organic light emitting diode comprising same, and more specifically, to a method for manufacturing a light extraction substrate for an organic light emitting diode, a light extraction substrate for an organic light emitting diode, and an organic light emitting diode comprising same, the method capable of complicating or diversifying the path of a light that is emitted by forming cracks on a matrix layer that can induce scattering of the light emitted from the organic light emitting diode, thereby further improving light extraction efficiency of the organic light emitting diode. To this end, provided in the present invention is the method for manufacturing the light extraction substrate for the organic light emitting diode, comprising: a mixture-preparing step of preparing a mixture by mixing a sol-gel solution containing a first metal oxide, and a plurality of scattering particles composed of a second metal oxide having a refractive index different from that of the first metal oxide; a mixture coating step of coating the mixture on a base substrate; and a mixture firing step of firing the mixture which has been coated to form, on the base substrate, the matrix layer comprising the first metal oxide and inside of which the scattering particles are dispersed, wherein in the mixture firing step, cracks that can induce scattering of the light emitted from the light emitting diode are formed on the matrix layer due to the difference in the coefficient of thermal expression (CTE) of the base substrate and the first metal oxide.
(FR)La présente invention concerne un procédé de fabrication d'un substrat d'extraction de lumière pour diode électroluminescente organique, un substrat d'extraction de lumière pour diode électroluminescente organique et une diode électroluminescente organique le comportant, et plus particulièrement, un procédé de fabrication d'un substrat d'extraction de lumière pour diode électroluminescente organique, un substrat d'extraction de lumière pour diode électroluminescente organique et une diode électroluminescente organique la comportant, le procédé étant capable de compliquer ou de diversifier le parcours d'une lumière qui est émise en formant des fissures sur une couche de matrice qui peut induire une diffusion de la lumière émise à partir de la diode électroluminescente organique, améliorant ainsi davantage le rendement d'extraction de lumière de la diode électroluminescente organique. À cette fin, la présente invention concerne un procédé de fabrication du substrat d'extraction de lumière pour la diode électroluminescente organique, comportant: une étape de préparation de mélange consistant à préparer un mélange en mélangeant une solution sol-gel contenant un premier oxyde métallique, et une pluralité de particules de diffusion composées d'un deuxième oxyde métallique présentant un indice de réfraction différent de celui du premier oxyde métallique; une étape d'application du mélange consistant à appliquer le mélange sur un substrat de base; et une étape de cuisson du mélange consistant à cuire le mélange qui a été appliqué pour former, sur le substrat de base, la couche de matrice comportant le premier oxyde métallique et à l'intérieur de laquelle sont dispersées les particules de diffusion, des fissures susceptibles d'induire une diffusion de la lumière émise à partir de la diode électroluminescente étant, lors de l'étape de cuisson du mélange, formées sur la couche de matrice en raison de la différence de coefficient de dilatation thermique (CDT) du substrat de base et du premier oxyde métallique.
(KO)본 발명은 유기발광소자용 광추출 기판 제조방법, 유기발광소자용 광추출 기판 및 이를 포함하는 유기발광소자에 관한 것으로서 더욱 상세하게는 유기발광소자로부터 방출되는 광에 대한 산란 유도가 가능한 균열을 매트릭스 층에 형성시킴으로써, 방출되는 광의 경로를 복잡화 혹은 다변화시킬 수 있고, 이를 통해, 유기발광소자의 광추출 효율을 보다 향상시킬 수 있는 유기발광소자용 광추출 기판 제조방법, 유기발광소자용 광추출 기판 및 이를 포함하는 유기발광소자에 관한 것이다. 이를 위해, 본 발명은, 제1 금속산화물을 포함하는 졸겔용액과, 상기 제1 금속산화물과 굴절률이 다른 제2 금속산화물로 이루어진 다수의 산란입자를 혼합하여 혼합물을 제조하는 혼합물 제조단계; 상기 혼합물을 베이스 기판 상에 코팅하는 혼합물 코팅단계; 및 코팅된 상기 혼합물을 소성하여, 상기 베이스 기판 상에 상기 제1 금속산화물로 이루어지고 상기 산란입자가 내부에 분산되어 있는 매트릭스 층을 형성하는 혼합물 소성단계를 포함하되, 상기 혼합물 소성단계에서는 상기 베이스 기판과 상기 제1 금속산화물 간의 열팽창계수(CTE) 차이로 인해, 유기발광소자로부터 방출되는 광에 대한 산란 유도가 가능한 균열이 매트릭스 층에 형성되는 것을 특징으로 하는 유기발광소자용 광추출 기판 제조방법을 제공한다.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG).
Publication Language: Korean (KO)
Filing Language: Korean (KO)