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Machine translation
1. (WO2016104946) LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE PACKAGE HAVING SAME
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2016/104946    International Application No.:    PCT/KR2015/012138
Publication Date: 30.06.2016 International Filing Date: 11.11.2015
IPC:
H01L 33/00 (2010.01)
Applicants: LG INNOTEK CO., LTD. [KR/KR]; 98, Huam-ro, Jung-gu Seoul 04637 (KR)
Inventors: KIM, Chong Cook; (KR)
Agent: KIM, Ki Moon; (KR)
Priority Data:
10-2014-0185904 22.12.2014 KR
Title (EN) LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE PACKAGE HAVING SAME
(FR) DISPOSITIF ÉMETTANT DE LA LUMIÈRE ET BOÎTIER DE DISPOSITIF ÉMETTANT DE LA LUMIÈRE COMPRENANT CELUI-CI
(KO) 발광 소자 및 이를 구비한 발광 소자 패키지
Abstract: front page image
(EN)The embodiments relate to a light emitting device. The light emitting device disclosed in the embodiments comprises: a first conductive semiconductor layer having a first conductive dopant; an active layer disposed on the first conductive semiconductor layer and having a plurality of barrier layers and a plurality of well layers; an electron blocking structure layer disposed on the active layer; and a second conductive semiconductor layer disposed on the electron blocking structure layer. The active layer includes a first barrier layer adjacent to the electron blocking structure layer, and a first well layer adjacent to the first barrier layer. The plurality of barrier layers includes the first conductive dopant. The electron blocking structure layer includes a plurality of semiconductor layers having a second conductive dopant and an AlGaN-based semiconductor. The plurality of semiconductor layers includes a first semiconductor layer having a first region adjacent to the first barrier layer. The first region of the first semiconductor layer includes an AlGaN-based semiconductor having an aluminum composition of 95% or greater. A light emitting structure having the active layer and the electron blocking structure layer emits light of respectively different peak wavelengths.
(FR)Les modes de réalisation de l'invention concernent un dispositif émettant de la lumière. Ledit dispositif émettant de la lumière comprend : une première couche conductrice de semi-conducteur comprenant un premier dopant conducteur; une couche active disposée sur la première couche conductrice de semi-conducteur et comprenant une pluralité de couches barrière et une pluralité de couches de puits; une couche de structure de blocage d'électrons disposée sur la couche active; et une seconde couche conductrice de semi-conducteur disposée sur la couche de structure de blocage d'électrons. Ladite couche active comprend une première couche barrière adjacente à la couche de structure de blocage d'électrons, et une première couche de puits adjacente à la première couche barrière. Ladite pluralité de couches barrière comprend le premier dopant conducteur. Ladite couche de structure de blocage d'électrons comprend une pluralité de couches de semi-conducteur comprenant un second dopant conducteur et un semi-conducteur à base d'AlGaN. La pluralité de couches de semi-conducteur comprend une première couche de semi-conducteur présentant une première région adjacente à la première couche barrière. La première région de la première couche de semi-conducteur comprend un semi-conducteur à base d'AlGaN présentant une composition d'aluminium supérieure ou égale à 95 %. Une structure d'émission de lumière comprenant la couche active et la couche de structure de blocage d'électrons émet de la lumière de différentes longueurs d'onde de crête, respectivement.
(KO)실시예는 발광소자에 관한 것이다. 실시 예에 개시된 발광 소자는, 제1도전형의 도펀트를 갖는 제1도전형 반도체층; 상기 제1도전형 반도체층 상에 배치되며 복수의 장벽층 및 복수의 우물층을 갖는 활성층; 상기 활성층 상에 배치된 전자 차단 구조층; 및 상기 전자 차단 구조층 상에 배치된 제2도전형 반도체층을 포함하며, 상기 활성층은 상기 전자 차단 구조층에 인접한 제1장벽층 및 상기 제1장벽층에 인접한 제1우물층을 포함하며, 상기 복수의 장벽층은 제1도전형의 도펀트를 포함하며, 상기 전자 차단 구조층은 제2도전형의 도펀트를 갖고 AlGaN계 반도체를 갖는 복수의 반도체층을 포함하며, 상기 복수의 반도체층은 상기 제1장벽층에 인접한 제1영역을 갖는 제1반도체층을 포함하며, 상기 제1반도체층의 제1영역은 95% 이상의 알루미늄 조성을 갖는 AlGaN계 반도체를 포함하며, 상기 활성층 및 상기 전자 차단 구조층을 갖는 발광 구조물은 서로 다른 피크 파장을 발광한다.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG).
Publication Language: Korean (KO)
Filing Language: Korean (KO)